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SWF20N65

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HXY MOSFET MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SWF20N65

HXY MOSFET · MOSFETs · TO-220F

SWF20N65 from HXY MOSFET, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage is rated ±30 V (VGSS).
2 D passive Drain terminal; drain-to-source voltage is rated 650 V (VDSS) with continuous drain current of 20 A.
3 S passive Source terminal; maximum continuous body diode forward current is 20 A and pulsed current is 80 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 650 V 1
Gate-to-Source Voltage VGSS -30 30 V 1
Continuous Drain Current ID 20 A 1
Continuous Drain Current @ Tc=100℃ ID @ Tc =100℃ 13 A Tc=100℃ 1
Pulsed Drain Current IDM 80 A VGS=10V 1
Single Pulse Avalanche Energy EAS 980 mJ 1
Power Dissipation PD 32 W 1
Maximum Temperature for Soldering Leads TL 300 ℃ Leads at 0.063in (1.6mm) from Case for 10 seconds 1
Maximum Temperature for Soldering Package Body TPAK 260 ℃ Package Body for 10 seconds 1
Operating and Storage Temperature Range TJ& TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 3.9 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 55 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 650 V ID = 250µA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 650V, VGS = 0V 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±30V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250µA 2
Static Drain-Source ON-Resistance RDS(ON) 0.4 0.47 Ω VGS = 10V, ID = 10A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 20A 2
Maximum Continuous Drain to Source Diode Forward Current IS 20 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 80 A 2
Body Diode Reverse Recovery Time trr 494 ns IF = 20A, di/dt = 100A/us 2
Body Diode Reverse Recovery Charge Qrr 7.9 μC IF = 20A, di/dt = 100A/us 2
Input Capacitance Ciss 3234 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Output Capacitance Coss 266 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Reverse Transfer Capacitance Crss 34 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Total Gate Charge Qg 73 nC VGS = 0 to 10V, VDS = 520V, ID = 20A 2
Gate Source Charge Qgs 17 nC VGS = 0 to 10V, VDS = 520V, ID = 20A 2
Gate Drain (Miller) Charge Qgd 29 nC VGS = 0 to 10V, VDS = 520V, ID = 20A 2
Turn-On Delay Time td(on) 45 ns VGS = 10V, VDD = 330V, ID = 20A, RGEN = 24Ω 2
Turn-On Rise Time tr 64 ns VGS = 10V, VDD = 330V, ID = 20A, RGEN = 24Ω 2
Turn-Off Delay Time td(off) 218 ns VGS = 10V, VDD = 330V, ID = 20A, RGEN = 24Ω 2
Turn-Off Fall Time tf 84 ns VGS = 10V, VDD = 330V, ID = 20A, RGEN = 24Ω 2

CAD (KiCad official)

  • Symbol: SWF20N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 83348eaa8244ede1, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF