component
SWF13N50
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWF13N50
HXY MOSFET · MOSFETs · TO-220F
SWF13N50 from HXY MOSFET, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, rated for a gate-to-source voltage of ±30 V with a gate threshold voltage VGS(TH) of 2.0 V to 4.0 V. |
| 2 | D | passive | Drain terminal of the MOSFET, rated for a drain-to-source voltage VDSS of 500 V and a continuous drain current of 13 A. |
| 3 | S | passive | Source terminal of the MOSFET, which carries the continuous source current ISD of 13 A through the integral body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 500 | V | 1 | |||
| Gate-to-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current @ Tc=100℃ | ID | 13 | A | @ Tc=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 52 | A | at VGS=10V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 900 | mJ | 1 | |||
| Power Dissipation | PD | 48 | W | 1 | |||
| Maximum Temperature for Soldering Leads | TL | 300 | ℃ | Leads at 0.063in (1.6mm) from Case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering Package Body | TPAK | 260 | ℃ | Package Body for 10 seconds | 1 | ||
| Operating and Storage Temperature Range | TJ & TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.6 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | 1 | |||
| Drain-to-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=500V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current at TJ=125℃ | IDSS | 100 | uA | VDS=400V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-to-Source Leakage Current (positive) | IGSS | 100 | nA | VGS==30V, VDS=0V | 2 | ||
| Gate-to-Source Leakage Current (negative) | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.4 | 0.48 | Ω | VGS=10V, ID=6.5A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Continuous Source Current | ISD | 13 | A | Integral pn-diode in MOSFET | 2 | ||
| Pulsed Source Current | ISM | 52 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=13A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
SWF13N50 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
277403678726f025, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).