component

SWD9N25D

Public Made by Adom

by adom

Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorswd9n25dfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7h ago
viewers swd9n25d: viewers · Ray 7h ago
package.json Publish 0.1.0 · Ray 7h ago
page.json Set visibility: public · Ray 7h ago
README.md Publish 0.1.0 · Ray 7h ago
swd9n25d-etched.glb Publish 0.1.0 · Ray 7h ago
swd9n25d-etched.step swd9n25d: factory component page (tier=lcsc) · Ray 7h ago
swd9n25d-hero.glb swd9n25d: hero GLB from the etched model (keeps the MPN mark) · Ray 7h ago
swd9n25d-hero.overlay.json Publish 0.1.0 · Ray 7h ago
swd9n25d.glb Publish 0.1.0 · Ray 7h ago
swd9n25d.kicad_mod Publish 0.1.0 · Ray 7h ago
swd9n25d.kicad_sym Publish 0.1.0 · Ray 7h ago
swd9n25d.lbr Publish 0.1.0 · Ray 7h ago
swd9n25d.step Publish 0.1.0 · Ray 7h ago

SWD9N25D

Samwin · MOSFETs · TO-252

SWD9N25D from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input with a gate-to-source voltage rating of ±25 V and a threshold voltage of 2 to 4 V at ID=250uA.
2 Drain passive Drain terminal rated for 250 V drain-to-source voltage, 9 A continuous current at TC=25°C and 36 A pulsed.
3 Source passive Source terminal, with body diode continuous source current of 9 A and pulsed source current of 36 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 250 V 1
Continuous drain current ID 9 A TC=25oC; limited by junction temperature 1
Continuous drain current ID 5.7 A TC=100oC; limited by junction temperature 1
Drain current pulsed IDM 36 A note 1 1
Gate to source voltage VGS -25 25 V 1
Single pulsed avalanche energy EAS 162 mJ note 2 1
Repetitive avalanche energy EAR 16 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 96 W TC=25oC, TO-252 1
Derating factor above 25oC 0.8 W/oC TO-252 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 1.3 oC/W TO-252 1
Thermal resistance, junction to ambient Rthja 85 oC/W TO-252 1
Drain to source breakdown voltage BVDSS 250 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=250V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=200V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=25V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-25V, VDS=0V 2
Gate threshold voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 0.37 0.45 Ω VGS=10V, ID=4.5A 2
Continuous source current IS 9 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 36 A 2
Diode forward voltage drop VSD 1.4 V IS=9A, VGS=0V 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.28 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 6.8 S VDS=20V, ID=4.5A 2
Input capacitance Ciss 679 pF VGS=0V, VDS=25V, f=1MHz 2
Output capacitance Coss 104 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse transfer capacitance Crss 21 pF VGS=0V, VDS=25V, f=1MHz 2
Turn on delay time td(on) 7 ns VDS=125V, ID=9A, RG=25Ω, VGS=10V 2
Rising time tr 31 ns VDS=125V, ID=9A, RG=25Ω, VGS=10V 2
Turn off delay time td(off) 50 ns VDS=125V, ID=9A, RG=25Ω, VGS=10V 2
Fall time tf 30 ns VDS=125V, ID=9A, RG=25Ω, VGS=10V 2
Total gate charge Qg 20.3 nC VDS=200V, VGS=10V, ID=9A 2
Gate-source charge Qgs 3.7 nC VDS=200V, VGS=10V, ID=9A 2
Gate-drain charge Qgd 8.6 nC VDS=200V, VGS=10V, ID=9A 2
Gate resistance Rg 1.5 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 175 ns IS=9A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 859 nC IS=9A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWD9N25D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: swd9n25d-etched.step / swd9n25d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swd9n25d.step / swd9n25d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 f2f64f0216ec002e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF