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SWD7N65J

Public Made by Adom

by adom

Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWD7N65J

Samwin · MOSFETs · TO-252

SWD7N65J from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input with a maximum gate-to-source voltage of ±30 V and RDS(ON) specified at VGS=10 V.
2 Drain passive Drain terminal rated for 650 V drain-to-source voltage and 7 A continuous current at TC=25°C (21 A pulsed).
3 Source passive Source terminal, with continuous body-diode source current of 7 A and pulsed source current of 21 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 650 V 1
Drain current pulsed IDM 21 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 180 mJ note 2 1
Repetitive avalanche energy EAR 18 mJ note 1 1
MOSFET dv/dt ruggedness dv/dt 30 V/ns VDS=0~400V 1
Peak diode recovery dv/dt dv/dt 20 V/ns note 3 1
Total power dissipation PD 113.6 W TC=25°C, TO-252 1
Derating factor above 25°C 0.9 W/°C TO-252 1
Operating junction and storage temperature TSTG, TJ -55 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 1.1 °C/W TO-252 1
Drain to source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=650V VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=520V, TJ=125°C 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Drain to source on state resistance RDS(ON) 0.6 0.66 Ω VGS=10V, ID=3.5A, TJ=25°C 2
Drain to source on state resistance RDS(ON) 1.4 Ω VGS=10V, ID=3.5A, TJ=125°C 2
Diode forward voltage drop VSD 1.4 V IS=7A, VGS=0V 2
Continuous source current IS 7 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 21 A 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.81 V/°C ID=250uA, referenced to 25°C 2
Forward transconductance Gfs 6 S VDS=30V, ID=3.5A 2
Input capacitance Ciss 475 pF VGS=0V, VDS=200V, f=1MHz 2
Output capacitance Coss 15 pF VGS=0V, VDS=200V, f=1MHz 2
Reverse transfer capacitance Crss 1.1 pF VGS=0V, VDS=200V, f=1MHz 2
Turn on delay time td(on) 14 ns VDS=325V, ID=7A, RG=10Ω, VGS=10V 2
Rising time tr 25 ns VDS=325V, ID=7A, RG=10Ω, VGS=10V 2
Turn off delay time td(off) 37 ns VDS=325V, ID=7A, RG=10Ω, VGS=10V 2
Fall time tf 26 ns VDS=325V, ID=7A, RG=10Ω, VGS=10V 2
Total gate charge Qg 13 nC VDS=520V, VGS=10V, ID=7A, IG=3mA 2
Gate-source charge Qgs 3 nC VDS=520V, VGS=10V, ID=7A, IG=3mA 2
Gate-drain charge Qgd 6 nC VDS=520V, VGS=10V, ID=7A, IG=3mA 2
Gate resistance Rg 30 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 253 ns IS=7A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 2.1 uC IS=7A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWD7N65J
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: swd7n65j-etched.step / swd7n65j-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swd7n65j.step / swd7n65j.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 6ebb41b8fd510b29, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF