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Contents

README

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SWD6N70DA

Samwin · MOSFETs · TO-252

SWD6N70DA from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with a maximum gate-to-source voltage of ±30 V and a typical threshold of 2.5 to 4.5 V.
2 Drain passive Drain terminal rated for 700 V drain-to-source voltage, 6 A continuous current (limited by junction temperature) and 24 A pulsed.
3 Source passive Source terminal carrying up to 6 A continuous and 24 A pulsed through the body diode, with 1.4 V maximum diode forward drop at 6 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 700 V 1
Continuous drain current ID 6 A @TC=25oC, limited by junction temperature 1
Continuous drain current ID 3.8 A @TC=100oC, limited by junction temperature 1
Drain current pulsed IDM 24 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 216 mJ note 2 1
Repetitive avalanche energy EAR 20 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 130.2 W @TC=25oC, TO252 1
Derating factor above 25oC 1.04 W/oC TO252 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Drain to source breakdown voltage BVDSS 700 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=700V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=560V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 1.7 1.9 Ω VGS=10V, ID=3A 2
Continuous source current IS 6 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 24 A 2
Diode forward voltage drop VSD 1.4 V IS=6A, VGS=0V 2
Thermal resistance, junction to case Rthjc 0.96 oC/W TO252 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.42 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 5 S VDS=30V, ID=3A 2
Input capacitance Ciss 1040 pF VGS=0V, VDS=25V, f=1MHz 2
Output capacitance Coss 88 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse transfer capacitance Crss 9 pF VGS=0V, VDS=25V, f=1MHz 2
Total gate charge Qg 26 nC VDS=560V, VGS=10V, ID=6A 2
Gate resistance Rg 2.5 Ω VDS=0V, Scan F mode 2

CAD (KiCad official)

  • Symbol: SWD6N70DA
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: swd6n70da-etched.step / swd6n70da-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swd6n70da.step / swd6n70da.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (9 pp, sha256 e76c40415b552e61, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF