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SWD630D

Public Made by Adom

by adom

Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWD630D

Samwin · MOSFETs · TO-252

SWD630D from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, rated for a gate-to-source voltage of ±20 V.
2 Drain passive Drain terminal, rated for 200 V drain-to-source voltage and 9 A continuous drain current (limited by junction temperature).
3 Source passive Source terminal, with continuous body-diode source current rated at 9 A and pulsed source current at 36 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 200 V 1
Continuous drain current ID 9 A TC=25°C; limited by junction temperature 1
Continuous drain current ID 5.7 A TC=100°C; limited by junction temperature 1
Drain current pulsed IDM 36 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 156 mJ note 2 1
Repetitive avalanche energy EAR 16 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 96.2 W TC=25°C, TO-252 1
Derating factor above 25°C 0.8 W/°C TO-252 1
Operating junction and storage temperature TSTG, TJ -55 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 1.3 °C/W TO-252 1
Thermal resistance, junction to ambient Rthja 54 °C/W 1
Drain to source breakdown voltage BVDSS 200 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=200V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=160V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 0.27 0.4 Ω VGS=10V, ID=4.5A 2
Continuous source current IS 9 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 36 A 2
Diode forward voltage drop VSD 1.4 V IS=9A, VGS=0V 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.23 V/°C ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 6.2 S VDS=20V, ID=4.5A 2
Input capacitance Ciss 720 pF VGS=0V, VDS=25V, f=1MHz 2
Output capacitance Coss 117 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse transfer capacitance Crss 30 pF VGS=0V, VDS=25V, f=1MHz 2
Turn on delay time td(on) 7 ns VDS=100V, ID=9A, RG=25Ω, VGS=10V (note 4,5) 2
Rising time tr 33 ns VDS=100V, ID=9A, RG=25Ω, VGS=10V (note 4,5) 2
Turn off delay time td(off) 41 ns VDS=100V, ID=9A, RG=25Ω, VGS=10V (note 4,5) 2
Fall time tf 29 ns VDS=100V, ID=9A, RG=25Ω, VGS=10V (note 4,5) 2
Total gate charge Qg 20 nC VDS=160V, VGS=10V, ID=9A, Ig=13mA (note 4,5) 2
Gate-source charge Qgs 4 nC VDS=160V, VGS=10V, ID=9A, Ig=13mA (note 4,5) 2
Gate-drain charge Qgd 8 nC VDS=160V, VGS=10V, ID=9A, Ig=13mA (note 4,5) 2
Gate resistance Rg 1.9 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 128 ns IS=9A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 556 nC IS=9A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWD630D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: swd630d-etched.step / swd630d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swd630d.step / swd630d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 d2e728f8c63c8274, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF