component
SWD4N65D
Public Made by Adomby adom
Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 9d ago |
| viewers | 9d ago |
| package.json | 9d ago |
| page.json | 9d ago |
| README.md | 9d ago |
| swd4n65d-etched.glb | 9d ago |
| swd4n65d-etched.step | 9d ago |
| swd4n65d-hero.glb | 9d ago |
| swd4n65d-hero.overlay.json | 9d ago |
| swd4n65d.glb | 9d ago |
| swd4n65d.kicad_mod | 9d ago |
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| swd4n65d.step | 9d ago |
SWD4N65D
Samwin · MOSFETs · TO-252
SWD4N65D from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage limited to ±30 V, with a typical threshold of 2.5 to 4.5 V at ID=250 uA. |
| 2 | Drain | passive | Drain terminal; drain-to-source voltage rated 650 V, continuous drain current 4 A at TC=25°C and pulsed 16 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with continuous body-diode source current of 4 A and pulsed 16 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=650V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=520V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 2 | 2.6 | Ω | VGS=10V, ID=2A | 2 | |
| Continuous source current | IS | 4 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 16 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=4A, VGS=0V | 2 | ||
| Drain to source voltage | VDSS | 650 | V | 1 | |||
| Continuous drain current | ID | 4 | A | TC=25oC; limited by junction temperature | 1 | ||
| Continuous drain current | ID | 2.5 | A | TC=100oC; limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 16 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 246 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 15 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 101 | W | TC=25oC, TO-252 column | 1 | ||
| Derating factor above 25oC | 0.81 | W/oC | TO-252 column | 1 | |||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, junction to case | Rthjc | 1.24 | oC/W | TO-252 column | 1 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.48 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 3.8 | S | VDS=30V, ID=2A | 2 | ||
| Input capacitance | Ciss | 758 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output capacitance | Coss | 69 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 8 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 15 | ns | VDS=325V, VGS=10V, ID=4A, RG=25Ω | 2 | ||
| Rising time | tr | 26 | ns | VDS=325V, VGS=10V, ID=4A, RG=25Ω | 2 | ||
| Turn off delay time | td(off) | 43 | ns | VDS=325V, VGS=10V, ID=4A, RG=25Ω | 2 | ||
| Fall time | tf | 26 | ns | VDS=325V, VGS=10V, ID=4A, RG=25Ω | 2 | ||
| Total gate charge | Qg | 18 | nC | VDS=520V, VGS=10V, ID=4A | 2 | ||
| Gate-source charge | Qgs | 4 | nC | VDS=520V, VGS=10V, ID=4A | 2 | ||
| Gate-drain charge | Qgd | 8 | nC | VDS=520V, VGS=10V, ID=4A | 2 | ||
| Gate resistance | Rg | 3.2 | Ω | VDS=0V, Scan F mode | 2 | ||
| Reverse recovery time | trr | 398 | ns | IS=4A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 2.1 | uC | IS=4A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWD4N65D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
swd4n65d-etched.step/swd4n65d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swd4n65d.step/swd4n65d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (8 pp, sha256
3a3ef76380e50250, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).