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SWD4N60D

Public Made by Adom

by adom

Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWD4N60D

Samwin · MOSFETs · TO-252

SWD4N60D from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-to-source voltage is limited to ±30 V, with a typical threshold of 2.5 to 4.5 V at ID=250uA and RDS(ON) specified at VGS=10V.
2 Drain passive Drain terminal; drain-to-source voltage rating is 600 V with continuous drain current of 4 A and pulsed drain current of 16 A.
3 Source passive Source terminal; connects to the integral body diode with continuous source current of 4 A and pulsed source current of 16 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage BVDSS 600 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=600V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=480V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 1.9 2.2 Ω VGS=10V, ID=2A 2
Continuous source current IS 4 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 16 A Integral reverse p-n Junction diode in the MOSFET 2
Diode forward voltage drop VSD 1.4 V IS=4A, VGS=0V 2
Drain to Source Voltage VDSS 600 V 1
Continuous Drain Current ID 4 A TC=25oC 1
Continuous Drain Current ID 2.5 A TC=100oC 1
Drain current pulsed IDM 16 A note 1 1
Gate to Source Voltage VGS -30 30 V 1
Single pulsed Avalanche Energy EAS 184 mJ note 2 1
Repetitive Avalanche Energy EAR 55 mJ note 1 1
Peak diode Recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 141 W TC=25oC, TO-252 1
Derating Factor above 25oC 1.13 W/oC TO-252 1
Operating Junction Temperature & Storage Temperature TSTG, TJ -55 150 oC 1
Maximum Lead Temperature for soldering TL 300 oC 1/8 from Case for 5 seconds 1
Thermal resistance, Junction to case Rthjc 0.89 oC/W TO-252 1
Thermal resistance, Junction to ambient Rthja 79 oC/W TO-252 1
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.47 V/oC ID=250uA, referenced to 25oC 2
Forward Transconductance Gfs 3.5 S VDS=30 V,ID =2A 2
Input capacitance Ciss 651 pF VGS=0V, VDS=25V, f=1MHz 2
Output capacitance Coss 70 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse transfer capacitance Crss 8.4 pF VGS=0V, VDS=25V, f=1MHz 2
Total gate charge Qg 18 nC VDS=480V, VGS=10V, ID=4A 2
Gate resistance Rg 3.1 Ω VDS=0V, Scan F mode 2

CAD (KiCad official)

  • Symbol: SWD4N60D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: swd4n60d-etched.step / swd4n60d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swd4n60d.step / swd4n60d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (7 pp, sha256 c83fd8d7d2375ded, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF