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SWD085R68E7T

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Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWD085R68E7T

Samwin · MOSFETs · TO-252

SWD085R68E7T from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-to-source voltage rated at ±20 V and threshold voltage of 2 to 4 V at ID=250uA.
2 Drain passive Drain terminal with drain-to-source voltage rating of 68 V and continuous drain current of 70 A at TC=25°C (pulsed 280 A).
3 Source passive Source terminal of the N-channel MOSFET, with continuous body-diode source current of 70 A and pulsed 280 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 68 V 1
Continuous drain current ID 70 A TC=25°C, limited by junction temperature 1
Continuous drain current ID 45 A TC=100°C, limited by junction temperature 1
Drain current pulsed IDM 280 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 180 mJ note 2 1
Repetitive avalanche energy EAR 18 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 92.6 W TC=25°C 1
Operating junction and storage temperature TSTG, TJ -55 150 °C 1
Thermal resistance, junction to case Rthjc 1.35 °C/W 1
Drain to source breakdown voltage BVDSS 68 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=68V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=54V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 10.2 12.5 mΩ VGS=10V, ID=40A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 16.2 mΩ VGS=10V, ID=40A,TJ=125oC 2
Continuous source current IS 70 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 280 A 2
Diode forward voltage drop VSD 1.4 V IS=45A, VGS=0V 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.04 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 61 S VDS=5V, ID=40A 2
Input capacitance Ciss 2145 pF VGS=0V, VDS=34V, f=1MHz 2
Output capacitance Coss 163 pF VGS=0V, VDS=34V, f=1MHz 2
Reverse transfer capacitance Crss 129 pF VGS=0V, VDS=34V, f=1MHz 2
Turn on delay time td(on) 13 ns VDS=34V, ID=30A, RG=4.7Ω, VGS=10V 2
Rising time tr 40 ns VDS=34V, ID=30A, RG=4.7Ω, VGS=10V 2
Turn off delay time td(off) 35 ns VDS=34V, ID=30A, RG=4.7Ω, VGS=10V 2
Fall time tf 15 ns VDS=34V, ID=30A, RG=4.7Ω, VGS=10V 2
Total gate charge Qg 47 nC VDS=54V, VGS=10V, ID=30A, IG=5mA 2
Gate-source charge Qgs 14 nC VDS=54V, VGS=10V, ID=30A, IG=5mA 2
Gate-drain charge Qgd 16 nC VDS=54V, VGS=10V, ID=30A, IG=5mA 2
Gate resistance Rg 2.7 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 20 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 13 nC IS=30A, VGS=0V, dIF/dt=100A/us 2
Derating factor above 25oC 0.74 W/oC 1

CAD (KiCad official)

  • Symbol: SWD085R68E7T
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: swd085r68e7t-etched.step / swd085r68e7t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swd085r68e7t.step / swd085r68e7t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 a8d37777aaf6e367, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF