# SWD076R68E7T

**Samwin** · MOSFETs · TO-252

SWD076R68E7T from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhanced-mode MOSFET, with gate-to-source voltage rated ±20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET, with drain-to-source voltage VDSS rated 68 V. |
| 3 | Source | passive | Source terminal of the MOSFET, serving as the reference for VGS and the integral body diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS |  |  | 68 | V |  | 1 |
| Continuous drain current | ID |  |  | 85 | A | @TC=25oC | 1 |
| Continuous drain current | ID |  |  | 60 | A | @TC=100oC | 1 |
| Drain current pulsed | IDM |  |  | 340 | A | note 1 | 1 |
| Gate to source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 182 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR |  |  | 18 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD |  |  | 125 | W | @TC=25oC | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 |  | 150 | oC |  | 1 |
| Thermal resistance, junction to case | Rthjc |  |  | 1 | oC/W |  | 1 |
| Drain to source breakdown voltage | BVDSS | 68 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS |  |  | 1 | uA | VDS=68V, VGS=0V | 2 |
| Drain to source leakage current | IDSS |  |  | 50 | uA | VDS=54V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 |  |  | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 8 | 9.1 | mΩ | VGS=10V, ID=40A, TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) |  |  | 13 | mΩ | VGS=10V, ID=40A, TJ=125oC | 2 |
| Diode forward voltage drop | VSD |  |  | 1.4 | V | IS=45A, VGS=0V | 2 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ |  | 0.04 |  | V/oC | ID=250uA, referenced to 25oC | 2 |
| Forward transconductance | Gfs |  | 48 |  | S | VDS=5V, ID=40A | 2 |
| Input capacitance | Ciss |  | 3704 |  | pF | VGS=0V, VDS=34V, f=1MHz | 2 |
| Output capacitance | Coss |  | 231 |  | pF | VGS=0V, VDS=34V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 219 |  | pF | VGS=0V, VDS=34V, f=1MHz | 2 |
| Turn on delay time | td(on) |  | 22 |  | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 |
| Rising time | tr |  | 61 |  | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 |
| Turn off delay time | td(off) |  | 67 |  | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 |
| Fall time | tf |  | 28 |  | ns | VDS=34V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) | 2 |
| Total gate charge | Qg |  | 80 |  | nC | VDS=54V, VGS=10V, ID=30A, IG=3mA (note 4,5) | 2 |
| Gate-source charge | Qgs |  | 20 |  | nC | VDS=54V, VGS=10V, ID=30A, IG=3mA (note 4,5) | 2 |
| Gate-drain charge | Qgd |  | 31 |  | nC | VDS=54V, VGS=10V, ID=30A, IG=3mA (note 4,5) | 2 |
| Gate resistance | Rg |  | 3.5 |  | Ω | VDS=0V, Scan F mode | 2 |
| Continuous source current | IS |  | 85 |  | A | Integral reverse p-n junction diode in the MOSFET | 2 |
| Pulsed source current | ISM |  | 340 |  | A |  | 2 |
| Reverse recovery time | trr |  | 35 |  | ns | IS=30A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr |  | 44 |  | nC | IS=30A, VGS=0V, dIF/dt=100A/us | 2 |

## CAD (KiCad official)

- Symbol: `SWD076R68E7T`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `swd076r68e7t-etched.step` / `swd076r68e7t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swd076r68e7t.step` / `swd076r68e7t.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Samwin datasheet](docs/swd076r68e7t-datasheet.pdf) (6 pp, sha256 `c00e90d023be26ff`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/swd076r68e7t-datasheet.pdf)