component
SWD070R08E7T
Public Made by Adomby adom
Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWD070R08E7T
Samwin · MOSFETs · TO-252
SWD070R08E7T from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with gate-to-source voltage limited to ±20 V and threshold voltage VGS(TH) of 2 to 4 V. |
| 2 | Drain | passive | Drain terminal with drain-to-source voltage rating of 80 V and continuous drain current of 95 A at TC=25°C (limited by junction temperature). |
| 3 | Source | passive | Source terminal of the MOSFET, with continuous body-diode source current of 95 A and pulsed source current of 380 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 80 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=80V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=64V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 7.6 | 9 | mΩ | VGS=10V, ID=30A, TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 7.8 | 9.2 | mΩ | VGS=10V, ID=50A, TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 12 | mΩ | VGS=10V, ID=30A, TJ=125oC | 2 | ||
| Diode forward voltage drop | VSD | 1.4 | V | IS=50A, VGS=0V | 2 | ||
| Continuous source current | IS | 95 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 380 | A | 2 | |||
| Drain to source voltage | VDSS | 80 | V | 1 | |||
| Continuous drain current | ID | 95 | A | TC=25oC | 1 | ||
| Continuous drain current | ID | 63 | A | TC=100oC | 1 | ||
| Drain current pulsed | IDM | 380 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 272 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 20 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 130.2 | W | TC=25oC | 1 | ||
| Operating junction temperature & storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 0.96 | oC/W | 1 | |||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.07 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 44 | S | VDS=5V, ID=30A | 2 | ||
| Input capacitance | Ciss | 5291 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Output capacitance | Coss | 274 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 255 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 29 | ns | VDS=40V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Rising time | tr | 73 | ns | VDS=40V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Turn off delay time | td(off) | 93 | ns | VDS=40V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Fall time | tf | 36 | ns | VDS=40V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Total gate charge | Qg | 101 | nC | VDS=64V, VGS=10V, ID=30A, IG=3mA | 2 | ||
| Gate-source charge | Qgs | 30 | nC | VDS=64V, VGS=10V, ID=30A, IG=3mA | 2 | ||
| Gate-drain charge | Qgd | 36 | nC | VDS=64V, VGS=10V, ID=30A, IG=3mA | 2 | ||
| Gate resistance | Rg | 4 | Ω | VDS=0V, Scan F mode | 2 | ||
| Reverse recovery time | trr | 42 | ns | IS=30A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 68 | nC | IS=30A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWD070R08E7T - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
swd070r08e7t-etched.step/swd070r08e7t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swd070r08e7t.step/swd070r08e7t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
e857d3f9f941c01e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).