component

SWD065R03VLT

Public Made by Adom

by adom

Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorswd065r03vltfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 9d ago
viewers swd065r03vlt: viewers · Ray 9d ago
package.json Publish 0.1.0 · Ray 9d ago
page.json Set visibility: public · Ray 9d ago
README.md Publish 0.1.0 · Ray 9d ago
swd065r03vlt-etched.glb Publish 0.1.0 · Ray 9d ago
swd065r03vlt-etched.step swd065r03vlt: factory component page (tier=lcsc) · Ray 9d ago
swd065r03vlt-hero.glb swd065r03vlt: hero GLB from the etched model (keeps the MPN mark) · Ray 9d ago
swd065r03vlt-hero.overlay.json Publish 0.1.0 · Ray 9d ago
swd065r03vlt.glb Publish 0.1.0 · Ray 9d ago
swd065r03vlt.kicad_mod Publish 0.1.0 · Ray 9d ago
swd065r03vlt.kicad_sym Publish 0.1.0 · Ray 9d ago
swd065r03vlt.lbr Publish 0.1.0 · Ray 9d ago
swd065r03vlt.step Publish 0.1.0 · Ray 9d ago

SWD065R03VLT

Samwin · MOSFETs · TO-252

SWD065R03VLT from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; VGS rated ±20 V max with threshold VGS(TH) of 1.2 V min to 2.2 V max at ID=250uA.
2 Drain passive Drain terminal; VDSS 30 V, continuous drain current 70 A at TC=25°C and 280 A pulsed.
3 Source passive Source terminal of the N-channel MOSFET; body diode continuous source current IS is 70 A max.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 30 V 1
Continuous drain current ID 70 A TC=25°C 1
Continuous drain current ID 44 A TC=100°C 1
Drain current pulsed IDM 280 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 72 mJ note 2 1
Repetitive avalanche energy EAR 7 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 53.2 W TC=25°C 1
Operating junction and storage temperature TSTG, TJ -55 150 °C 1
Thermal resistance, junction to case Rthjc 2.35 °C/W 1
Drain to source breakdown voltage BVDSS 30 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=30V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=24V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 1.2 2.2 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 9.2 11 mΩ VGS=4.5V, ID=10A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 6.6 7.5 mΩ VGS=10V, ID=15A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 10 mΩ VGS=10V, ID=15A,TJ=125oC 2
Continuous source current IS 70 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 280 A 2
Diode forward voltage drop VSD 1.4 V IS=45A, VGS=0V 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.02 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 43 S VDS=5V, ID=15A 2
Input capacitance Ciss 1415 pF VGS=0V, VDS=15V, f=1MHz 2
Output capacitance Coss 196 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse transfer capacitance Crss 180 pF VGS=0V, VDS=15V, f=1MHz 2
Turn on delay time td(on) 5 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Rising time tr 28 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Turn off delay time td(off) 20 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Fall time tf 13 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Total gate charge Qg 33 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate-source charge Qgs 6 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate-drain charge Qgd 8 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate resistance Rg 2.5 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 9 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 3 nC IS=30A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWD065R03VLT
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: swd065r03vlt-etched.step / swd065r03vlt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swd065r03vlt.step / swd065r03vlt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 7fde2b6760d69d87, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF