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SWD062R08E8T

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by adom

Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWD062R08E8T

Samwin · MOSFETs · TO-252

SWD062R08E8T from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, rated for VGS of ±20 V maximum with a gate threshold of 2 to 4 V.
2 Drain passive Drain terminal of the MOSFET, rated for VDSS of 80 V and continuous drain current of 110 A at TC=25°C.
3 Source passive Source terminal of the MOSFET, with body diode continuous source current of 110 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 80 V 1
Continuous drain current ID 110 A TC=25°C, limited by junction temperature 1
Continuous drain current ID 73 A TC=100°C, limited by junction temperature 1
Drain current pulsed IDM 440 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 306 mJ note 2 1
Repetitive avalanche energy EAR 30 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 142 W TC=25°C 1
Operating junction and storage temperature TSTG, TJ -55 150 °C 1
Thermal resistance, junction to case Rthjc 0.88 °C/W 1
Drain to source breakdown voltage BVDSS 80 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=80V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=64V, TJ=125°C 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 6 7.2 mΩ VGS=10V, ID=30A, TJ=25°C 2
Drain to source on state resistance RDS(ON) 9.7 mΩ VGS=10V, ID=30A, TJ=125°C 2
Diode forward voltage drop VSD 1.4 V IS=45A, VGS=0V 2
Continuous source current IS 110 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 440 A 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.05 V/°C ID=250uA, referenced to 25°C 2
Forward transconductance Gfs 57 S VDS=5V, ID=30A 2
Input capacitance Ciss 6755 pF VGS=0V, VDS=40V, f=1MHz 2
Output capacitance Coss 427 pF VGS=0V, VDS=40V, f=1MHz 2
Reverse transfer capacitance Crss 314 pF VGS=0V, VDS=40V, f=1MHz 2
Turn on delay time td(on) 30 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Rising time tr 71 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Turn off delay time td(off) 132 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Fall time tf 49 ns VDS=40V, ID=30A, RG=4.7Ω, VGS=10V 2
Total gate charge Qg 141 nC VDS=64V, VGS=10V, ID=30A, IG=5mA 2
Gate-source charge Qgs 32 nC VDS=64V, VGS=10V, ID=30A, IG=5mA 2
Gate-drain charge Qgd 50 nC VDS=64V, VGS=10V, ID=30A, IG=5mA 2
Gate resistance Rg 3.7 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 44 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 73 nC IS=30A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWD062R08E8T
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: swd062r08e8t-etched.step / swd062r08e8t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swd062r08e8t.step / swd062r08e8t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 1ef8f492cb1aaf1e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF