component
SWB046R08E8T
Public Made by Adomby adom
Samwin MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWB046R08E8T
Samwin · MOSFETs · TO-263
SWB046R08E8T from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for VGS of ±20 V maximum. |
| 2 | Drain | passive | Drain terminal, rated for VDSS of 80 V and continuous drain current of 150 A (limited by junction temperature) at TC=25°C. |
| 3 | Source | passive | Source terminal of the MOSFET, with body diode continuous source current rated at 150 A and pulsed 600 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 80 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=80V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=64V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 4.8 | 5.9 | mΩ | VGS=10V, ID=30A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 8.3 | mΩ | VGS=10V, ID=30A,TJ=125oC | 2 | ||
| Diode forward voltage drop | VSD | 1.4 | V | IS=45A, VGS=0V | 2 | ||
| Continuous source current | IS | 150 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 600 | A | 2 | |||
| Drain to source voltage | VDSS | 80 | V | 1 | |||
| Continuous drain current | ID | 150 | A | TC=25oC; limited by junction temperature | 1 | ||
| Continuous drain current | ID | 102 | A | TC=100oC; limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 600 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 361 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 30 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 227.3 | W | TC=25oC | 1 | ||
| Operating junction temperature & storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 0.55 | oC/W | 1 | |||
| Thermal resistance, Junction to ambient | Rthja | 50.5 | oC/W | 1 | |||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.06 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 60 | S | VDS=5V, ID=30A | 2 | ||
| Input capacitance | Ciss | 8422 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Output capacitance | Coss | 660 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 401 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 36 | ns | VDS=40V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Rising time | tr | 85 | ns | VDS=40V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Turn off delay time | td(off) | 154 | ns | VDS=40V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Fall time | tf | 63 | ns | VDS=40V, ID=30A, RG=4.7Ω, VGS=10V | 2 | ||
| Total gate charge | Qg | 183 | nC | VDS=64V, VGS=10V, ID=30A, IG=10mA | 2 | ||
| Gate-source charge | Qgs | 42 | nC | VDS=64V, VGS=10V, ID=30A, IG=10mA | 2 | ||
| Gate-drain charge | Qgd | 67 | nC | VDS=64V, VGS=10V, ID=30A, IG=10mA | 2 | ||
| Gate resistance | Rg | 3.2 | Ω | VDS=0V, Scan F mode | 2 | ||
| Reverse recovery time | trr | 46 | ns | IS=30A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 83 | nC | IS=30A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWB046R08E8T - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
swb046r08e8t-etched.step/swb046r08e8t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swb046r08e8t.step/swb046r08e8t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
7ef222007bc8e41a, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).