component

SWB036R10E8S

Public Made by Adom

by adom

Samwin MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorswb036r10e8sfactory-2.0.0extractor-text

Verified SWB036R10E8S

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SWB036R10E8S · TO-263 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-4ftj2op8/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ swb036r10e8s.kicad_sym✓ swb036r10e8s.kicad_mod✓ swb036r10e8s.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers swb036r10e8s: viewers · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
swb036r10e8s-etched.glb Publish 0.1.0 · Ray 4d ago
swb036r10e8s-etched.step swb036r10e8s: factory component page (tier=lcsc) · Ray 4d ago
swb036r10e8s-hero.glb swb036r10e8s: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
swb036r10e8s-hero.overlay.json Publish 0.1.0 · Ray 4d ago
swb036r10e8s.glb Publish 0.1.0 · Ray 4d ago
swb036r10e8s.kicad_mod Publish 0.1.0 · Ray 4d ago
swb036r10e8s.kicad_sym Publish 0.1.0 · Ray 4d ago
swb036r10e8s.lbr Publish 0.1.0 · Ray 4d ago
swb036r10e8s.step Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 4d ago

SWB036R10E8S

Samwin · MOSFETs · TO-263

SWB036R10E8S from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-to-source voltage rated at ±20 V (VGS).
2 Drain passive Drain terminal of the MOSFET, rated for 100 V drain-to-source voltage (VDSS) and 175 A continuous drain current at TC=25oC (silicon limited).
3 Source passive Source terminal of the MOSFET, connected to the integral reverse p-n junction diode with continuous source current rated at 175 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 100 V 1
Continuous drain current (TC=25C, silicon limited) ID 175 A TC=25oC, Silicon Limited 1
Continuous drain current (TC=100C, silicon limited) ID 132 A TC=100oC, Silicon Limited 1
Continuous drain current (TC=25C, package limited) ID 135 A TC=25oC, Package Limited 1
Drain current pulsed IDM 700 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 812 mJ note 2 1
Repetitive avalanche energy EAR 80 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 312.5 W TC=25oC 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 0.4 oC/W 1
Thermal resistance, junction to ambient Rthja 53 oC/W 1
Drain to source leakage current IDSS 1 uA VDS=100V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=80V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 3.8 4.6 mΩ VGS=10V, ID=20A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 6.2 mΩ VGS=10V, ID=20A, TJ=125oC 2
Drain to source breakdown voltage BVDSS 100 V VGS=0V, ID=250uA 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.05 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 76 S VDS=5V, ID=30A 2
Input capacitance Ciss 6263 pF VGS=0V, VDS=50V, f=100kHz 2
Output capacitance Coss 939 pF VGS=0V, VDS=50V, f=100kHz 2
Reverse transfer capacitance Crss 19 pF VGS=0V, VDS=50V, f=100kHz 2
Turn on delay time td(on) 33 ns VDS=50V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 2
Rising time tr 35 ns VDS=50V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 2
Turn off delay time td(off) 59 ns VDS=50V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 2
Fall time tf 14 ns VDS=50V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 2
Total gate charge Qg 85 nC VDS=80V, VGS=10V, ID=30A, IG=5mA (note 4,5) 2
Gate-source charge Qgs 31 nC VDS=80V, VGS=10V, ID=30A, IG=5mA (note 4,5) 2
Gate-drain charge Qgd 13 nC VDS=80V, VGS=10V, ID=30A, IG=5mA (note 4,5) 2
Gate resistance Rg 3 Ω VDS=0V, Scan F mode 2
Continuous source current IS 175 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 700 A 2
Diode forward voltage drop VSD 1.4 V IS=50A, VGS=0V 2
Reverse recovery time trr 68 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 142 nC IS=30A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWB036R10E8S
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: swb036r10e8s-etched.step / swb036r10e8s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swb036r10e8s.step / swb036r10e8s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 91fd1e1a795672bf, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF