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SWB020R03VLT

Samwin · MOSFETs · TO-263

SWB020R03VLT from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-to-source voltage limited to ±20 V with threshold of 1.2 to 2.4 V.
2 Drain passive Drain terminal; drain-to-source voltage up to 30 V and continuous drain current of 180 A (limited by junction temperature) at TC=25°C.
3 Source passive Source terminal of the N-channel MOSFET; continuous body-diode source current of 180 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source breakdown voltage BVDSS 30 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=30V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=24V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 1.2 2.4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 3.6 5 mΩ VGS=4.5V, ID=30A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 2.1 3 mΩ VGS=10V, ID=30A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 2.9 mΩ VGS=10V, ID=30A,TJ=125oC 2
Continuous source current IS 180 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 720 A 2
Diode forward voltage drop VSD 1.4 V IS=45A, VGS=0V 2
Drain to source voltage VDSS 30 V 1
Continuous drain current ID 180 A TC=25oC; limited by junction temperature 1
Continuous drain current ID 150 A TC=100oC; limited by junction temperature 1
Drain current pulsed IDM 720 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 576 mJ note 2 1
Repetitive avalanche energy EAR 57 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 192.3 W TC=25oC 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, Junction to case Rthjc 0.65 oC/W 1
Thermal resistance, Junction to ambient Rthja 50 oC/W 1
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.02 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 84 S VDS=5V, ID=30A 2
Input capacitance Ciss 6391 pF VGS=0V, VDS=15V, f=1MHz 2
Output capacitance Coss 1018 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse transfer capacitance Crss 719 pF VGS=0V, VDS=15V, f=1MHz 2
Turn on delay time td(on) 16 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Rising time tr 64 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Turn off delay time td(off) 158 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Fall time tf 78 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Total gate charge Qg 140 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate-source charge Qgs 19 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate-drain charge Qgd 42 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate resistance Rg 4.1 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 28 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 12 nC IS=30A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWB020R03VLT
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: swb020r03vlt-etched.step / swb020r03vlt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swb020r03vlt.step / swb020r03vlt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 141ee85234fc8c52, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF