component
SWB015R03VLT
Public Made by Adomby adom
Samwin MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSWB015R03VLT
Samwin · MOSFETs · TO-263
SWB015R03VLT from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for VGS of ±20 V with threshold voltage 1.2 V min to 2.4 V max at ID=250uA. |
| 2 | Drain | passive | Drain terminal, rated for VDSS of 30 V and continuous drain current of 250 A (limited by junction temperature) at TC=25°C. |
| 3 | Source | passive | Source terminal of the MOSFET, continuous source (body diode) current of 250 A and pulsed 750 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=24V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 1.2 | 2.4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.5 | 2.7 | mΩ | VGS=4.5V, ID=30A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.2 | 1.7 | mΩ | VGS=10V, ID=30A,TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.7 | mΩ | VGS=10V, ID=30A,TJ=125oC | 2 | ||
| Continuous source current | IS | 250 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 750 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.2 | V | IS=45A, VGS=0V | 2 | ||
| Drain to source voltage | VDSS | 30 | V | 1 | |||
| Continuous drain current | ID | 250 | A | TC=25oC | 1 | ||
| Continuous drain current | ID | 230 | A | TC=100oC | 1 | ||
| Drain current pulsed | IDM | 750 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 0.5 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 1600 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 298 | W | TC=25oC | 1 | ||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | °C | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 0.42 | °C/W | 1 | |||
| Thermal resistance, Junction to ambient | Rthja | 54 | °C/W | 1 | |||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.02 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 120 | S | VDS=5V, ID=30A | 2 | ||
| Input capacitance | Ciss | 11000 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output capacitance | Coss | 1440 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 1330 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 29 | ns | VDS=15V, ID=60A, RG=4.7Ω, VGS=10V | 2 | ||
| Rising time | tr | 77 | ns | VDS=15V, ID=60A, RG=4.7Ω, VGS=10V | 2 | ||
| Turn off delay time | td(off) | 270 | ns | VDS=15V, ID=60A, RG=4.7Ω, VGS=10V | 2 | ||
| Fall time | tf | 150 | ns | VDS=15V, ID=60A, RG=4.7Ω, VGS=10V | 2 | ||
| Total gate charge | Qg | 315 | nC | VDS=24V, VGS=10V, ID=60A, IG=20mA | 2 | ||
| Gate-source charge | Qgs | 88 | nC | VDS=24V, VGS=10V, ID=60A, IG=20mA | 2 | ||
| Gate-drain charge | Qgd | 46 | nC | VDS=24V, VGS=10V, ID=60A, IG=20mA | 2 | ||
| Gate resistance | Rg | 1.4 | Ω | VDS=0V, Scan F mode | 2 | ||
| Reverse recovery time | trr | 40 | ns | IS=45A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 33 | nC | IS=45A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWB015R03VLT - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
swb015r03vlt-etched.step/swb015r03vlt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swb015r03vlt.step/swb015r03vlt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
f4baef99e788bbbf, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).