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SVT085R5NT
Public Made by Adomby adom
Hangzhou Silan Microelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSVT085R5NT
Hangzhou Silan Microelectronics · MOSFETs · TO-220
SVT085R5NT from Hangzhou Silan Microelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V, threshold VGS(th) 2.0 to 4.0 V at ID=250µA. |
| 2 | D | passive | Drain; VDS rated 85 V with continuous drain current up to 120 A at TC=25°C. |
| 3 | S | passive | Source; main current return terminal of the N-channel MOSFET, 120 A continuous at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 85 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=85V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250µA | 2 | |
| Static Drain-Source On State Resistance | RDS(on) | 4.5 | 5.5 | mΩ | VGS=10V, ID=50A | 2 | |
| Continuous Source Current | IS | 120 | A | Integral Reverse P-N Junction Diode in the MOSFET | 2 | ||
| Pulsed Source Current | ISM | 480 | A | Integral Reverse P-N Junction Diode in the MOSFET | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | IS=50A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 85 | V | TA=25C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25C | 1 | |
| Drain Current | ID | 120 | A | TC=25°C | 1 | ||
| Drain Current | ID | 90 | A | TC=100°C | 1 | ||
| Drain Current Pulsed | IDM | 480 | A | 1 | |||
| Power Dissipation | PD | 160 | W | TC=25C | 1 | ||
| Power Dissipation Derating | PD | 1.3 | W/C | Derate above 25C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 324 | mJ | L=0.5mH, IAS=36A, VDD=64V, RG=10, starting TJ=25C | 1 | ||
| Operation Junction Temperature Range | TJ | -55 | 150 | C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.78 | C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | C/W | 2 | |||
| Gate Resistance | RG | 1.9 | Ω | f=1MHz | 2 | ||
| Input Capacitance | Ciss | 4281 | pF | f=1MHz, VGS=0V, VDS=40V | 2 | ||
| Output Capacitance | Coss | 669 | pF | f=1MHz, VGS=0V, VDS=40V | 2 | ||
| Reverse Transfer Capacitance | Crss | 17 | pF | f=1MHz, VGS=0V, VDS=40V | 2 | ||
| Turn-on Delay Time | td(on) | 41 | ns | VDD=40V, VGS=10V, RG=24Ω, ID=13.3A | 2 | ||
| Turn-on Rise Time | tr | 68 | ns | VDD=40V, VGS=10V, RG=24Ω, ID=13.3A | 2 | ||
| Turn-off Delay Time | td(off) | 164 | ns | VDD=40V, VGS=10V, RG=24Ω, ID=13.3A | 2 | ||
| Turn-off Fall Time | tf | 85 | ns | VDD=40V, VGS=10V, RG=24Ω, ID=13.3A | 2 | ||
| Total Gate Charge | Qg | 68 | nC | VDD=40V, VGS=10V, ID=50A | 2 | ||
| Gate-Source Charge | Qgs | 28 | nC | VDD=40V, VGS=10V, ID=50A | 2 | ||
| Gate-Drain Charge | Qgd | 17 | nC | VDD=40V, VGS=10V, ID=50A | 2 | ||
| Reverse Recovery Time | Trr | 59 | ns | IS=20A, VGS=0V, dIF/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 0.12 | µC | IS=20A, VGS=0V, dIF/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
SVT085R5NT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
svt085r5nt-etched.step/svt085r5nt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);svt085r5nt.step/svt085r5nt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (9 pp, sha256
a452689b8d06c043, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).