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SVT078R0ND

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SVT078R0ND

UMW · MOSFETs · TO-252

SVT078R0ND from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the N-channel enhancement-mode MOSFET; gate-source voltage is rated VGS ±20 V.
2 D passive DRAIN terminal; drain-source voltage is rated VDS 68 V and continuous drain current ID is 88 A at TC=25°C.
3 S passive SOURCE terminal, the reference for the gate-source rating VGS ±20 V.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 68 V VGS=0V, IDS=250µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=68V, VGS=0V 3
Gate-Body Leakage IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(th) 2.5 3 3.5 V VDS=VGS, IDS=250µA 3
Drain-Source On-State Resistance RDS(ON) 6.3 7.5 mΩ VGS=10V, IDS=30A 3
Drain-Source Diode Forward Voltage VSD 1.3 V VGS=0V, IDS=30A 3
Drain-Source Voltage VDS 68 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 88 A TC=25°C 1
Continuous Drain Current ID 61 A TC=100°C 1
Drain Current-Pulsed IDM 292 A 1
Avalanche Energy EAS 550 mJ 1
Maximum Power Dissipation PD 167 W 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance, Junction to Case-sink RθJC 0.9 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 75 °C/W 2
Input Capacitance Ciss 4100 pF VDS=30V, VGS=0V, f=1MHz 3
Output Capacitance Coss 323 pF VDS=30V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 242 pF VDS=30V, VGS=0V, f=1MHz 3
Turn-On Delay Time tD(on) 25.5 ns VDS=30V, ID=30A, VGS=10V, RGEN=6Ω 3
Rise Time tr 92.9 ns VDS=30V, ID=30A, VGS=10V, RGEN=6Ω 3
Turn-Off Delay Time tD(off) 74.3 ns VDS=30V, ID=30A, VGS=10V, RGEN=6Ω 3
Fall Time tf 70.4 ns VDS=30V, ID=30A, VGS=10V, RGEN=6Ω 3
Total Gate Charge at 10V Qg 86 nC VDS=30V, IDS=20A, VGS=10V 3
Gate to Source Gate Charge Qgs 24.3 nC VDS=30V, IDS=20A, VGS=10V 3
Gate to Drain "Miller" Charge Qgd 26.4 nC VDS=30V, IDS=20A, VGS=10V 3
Reverse Recovery Time trr 27.9 ns IF=50A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 33.6 nC IF=50A, di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: SVT078R0ND
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: svt078r0nd-etched.step / svt078r0nd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); svt078r0nd.step / svt078r0nd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 530a2296f4ad262a, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF