# SVS20N60FJD2

**Hangzhou Silan Microelectronics** · MOSFETs · TO-220F-3

SVS20N60FJD2 from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated ±30 V (VGS). |
| 2 | D | passive | Drain of the MOSFET; rated 600 V drain-source (VDS), 20 A continuous drain current at TC=25°C, and 80 A pulsed drain current (IDM). |
| 3 | S | passive | Source of the MOSFET; continuous source current is limited to 20 A and source pulse current to 80 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 600 | V |  | 2 |
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 2 |
| Drain current | ID |  |  | 20 | A | TC=25°C | 2 |
| Drain current | ID |  |  | 12 | A | TC=100°C | 2 |
| Drain pulse current | IDM |  |  | 80 | A |  | 2 |
| Power dissipation | PD |  |  | 45 | W | TC=25°C | 2 |
| Power dissipation derating | PD |  |  | 0.36 | W/C | derate above 25°C | 2 |
| Single pulse avalanche energy | EAS |  |  | 967 | mJ |  | 2 |
| Body diode dv/dt ruggedness | dv/dt |  |  | 15 | V/ns |  | 2 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns |  | 2 |
| Operating junction temperature range | TJ | -55 |  | 150 | C |  | 2 |
| Storage temperature range | Tstg | -55 |  | 150 | C |  | 2 |
| Thermal resistance junction-to-case | RθJC |  |  | 2.78 | C/W |  | 2 |
| Thermal resistance junction-to-ambient | RθJA |  |  | 62.5 | C/W |  | 2 |
| Drain-source breakdown voltage | BVDSS | 600 |  |  | V | VGS=0V, ID=250µA | 3 |
| Drain-source leakage current | IDSS |  |  | 200 | nA | VDS=600V, VGS=0V | 3 |
| Gate-source leakage current | IGSS | -100 |  | 100 | nA | VGS=±30V, VDS=0V | 3 |
| Gate threshold voltage | VGS(th) | 2 |  | 4 | V | VGS=VDS, ID=250µA | 3 |
| Static drain-source on-resistance | RDS(on) |  | 0.16 | 0.19 | Ω | VGS=10V, ID=10A, Tj=25C | 3 |
| Continuous source current | IS |  |  | 20 | A | MOS管中源极、漏极构成的反偏 P-N结 | 3 |
| Source pulse current | ISM |  |  | 80 | A |  | 3 |
| Diode forward voltage | VSD |  |  | 1.2 | V | IS=20A, VGS=0V | 3 |

## CAD (KiCad official)

- Symbol: `SVS20N60FJD2`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755872687376224256) (10 pp, sha256 `8fa100e00282c0b2`, retrieved 2026-10-15, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/svs20n60fjd2-datasheet.pdf)