component
SVF7N80F
Public Made by Adomby adom
Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418
{
"schema_version": 1,
"type": "component",
"slug": "svf7n80f",
"title": "SVF7N80F",
"brief": "Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"svf7n80f",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "SVF7N80F",
"manufacturer": "Hangzhou Silan Microelectronics",
"package": "TO-220F-3",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588895225284595712",
"parts": {
"symbol": "svf7n80f.kicad_sym",
"footprint": "svf7n80f.kicad_mod",
"model_3d": "svf7n80f-hero.glb",
"model_3d_step": "svf7n80f.step",
"lbr": "svf7n80f.lbr",
"model_3d_plain": "svf7n80f.glb"
},
"distributor_links": {
"lcsc": "C68779"
},
"distributor_check": {
"checked_at": "2026-10-16T12:35:08Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "Gate",
"type": "input",
"description": "Gate terminal of the N-channel enhancement-mode MOSFET, with a gate-source voltage rating of ±30 V (VGS)."
},
{
"number": "2",
"name": "Drain",
"type": "passive",
"description": "Drain terminal, with a drain-source voltage rating of 800 V and a continuous drain current of 7.0 A at TC=25°C."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source terminal, with a continuous source current rating of 7.0 A for the integral P-N body diode."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet gives the pin assignment only as one generic line on page 1 ('1.Gate 2.Drain 3.Source'; The datasheet gives no pin-level electrical limits. The descriptions use the part-level ratings from"
],
"pages_sent": 11,
"cost_usd": 0.0406,
"at": "2026-10-16T12:34:56"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588895225284595712",
"pages": 11,
"sha256": "87567bd22aa1b0ec",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "svf7n80f.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
10.16,
4.7,
28.85
],
"zmin_mm": -9.75,
"centre_offset_mm": 0.935,
"footprint_binding": "identity",
"sha256": "7f1d530d2b80afd7cfb6522420bdcf9d79666f9bf84bbc5b905bfc33593c7ef0",
"checked": "2026-10-16",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Hangzhou Silan Microelectronics",
"Package": "TO-220F-3",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "87567bd22aa1b0ecd3912423fca8bc2a9d560805082d47610c77953eef16f3a9",
"rows": [
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "BVDSS",
"kind": "electrical",
"unit": "V",
"min": 800,
"typ": null,
"max": null,
"conditions": "VGS=0V, ID=250µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source Leakage Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS=800V, VGS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Leakage Current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VGS=±30V, VDS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 2,
"typ": null,
"max": 4,
"conditions": "VGS=VDS, ID=250µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Static Drain-Source On State Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 1.4,
"max": 1.6,
"conditions": "VGS=10V, ID=3.5A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Continuous Source Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 7,
"conditions": "Integral reverse P-N junction diode in the MOSFET",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Pulsed Source Current",
"symbol": "ISM",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 28,
"conditions": "Integral reverse P-N junction diode in the MOSFET",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.4,
"conditions": "IS=7.0A, VGS=0V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 800,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": 30,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 7,
"conditions": "TC=25C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 4.4,
"conditions": "TC=100C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain Current Pulsed",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 28,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 50,
"conditions": "TC=25C (SVF7N80F/FD column)",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Power Dissipation Derating",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W/C",
"min": null,
"typ": null,
"max": 0.4,
"conditions": "Derate above 25C (SVF7N80F/FD column)",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Single Pulsed Avalanche Energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 534,
"conditions": "Note 1: L=30mH, IAS=5.50A, VDD=100V, starting TJ=25C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Operation Junction Temperature Range",
"symbol": "TJ",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Storage Temperature Range",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance, Junction-to-Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "C/W",
"min": null,
"typ": 2.5,
"max": null,
"conditions": "SVF7N80F/FD column",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance, Junction-to-Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "C/W",
"min": null,
"typ": 62.5,
"max": null,
"conditions": "",
"source_page": 2,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"svf7n80f"
],
"discovery_pitch": "SVF7N80F (Hangzhou Silan Microelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"svf7n80f.kicad_sym",
"svf7n80f.kicad_mod",
"svf7n80f.glb",
"svf7n80f.step",
"svf7n80f.lbr",
"docs/hero.png",
"docs/svf7n80f-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"svf7n80f-hero.glb",
"svf7n80f-hero.overlay.json"
],
"visibility": {
"public": true
}
}