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SVF7N65F
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Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SVF7N65F
Hangzhou Silan Microelectronics · MOSFETs · TO-220F-3
SVF7N65F from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet limits the gate-source voltage VGS to ±30 V. |
| 2 | Drain | passive | Drain terminal; the absolute maximum drain-source voltage VDS is 650 V and the continuous drain current ID is 7.0 A at TC=25°C. |
| 3 | Source | passive | Source terminal; the continuous source current IS is rated at 7.0 A for the integral body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 3 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS= VDS, ID=250µA | 3 | |
| Static Drain-Source On State Resistance | RDS(on) | 1.1 | 1.4 | Ω | VGS=10V, ID=3.5A | 3 | |
| Continuous Source Current | IS | 7 | A | Integral Reverse P-N Junction Diode in the MOSFET | 3 | ||
| Pulsed Source Current | ISM | 28 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.4 | V | IS=7.0A, VGS=0V | 3 | ||
| Drain-Source Voltage | VDS | 650 | V | 2 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Drain Current (continuous) | ID | 7 | A | TC = 25C | 2 | ||
| Drain Current (continuous) | ID | 4.4 | A | TC = 100C | 2 | ||
| Drain Current Pulsed | IDM | 28 | A | 2 | |||
| Power Dissipation | PD | 46 | W | TC=25C | 2 | ||
| Power Dissipation derating | PD | 0.37 | W/C | Derate above 25C | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 435 | mJ | Note 1: L=30mH, IAS=5.0A, VDD=100V, RG=25, TJ=25C | 2 | ||
| Reverse Diode dv/dt | dv/dt | 4.5 | V/ns | Note 2: VDS=0~400V, ISD<=10A, TJ=25C | 2 | ||
| MOSFET dv/dt Ruggedness | dv/dt | 50 | V/ns | Note 3: VDS=0~480V | 2 | ||
| Operation Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.7 | C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | C/W | 2 |
CAD (KiCad official)
- Symbol:
SVF7N65F - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (10 pp, sha256
767913f492042958, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SVF7N65F
**Hangzhou Silan Microelectronics** · MOSFETs · TO-220F-3
SVF7N65F from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet limits the gate-source voltage VGS to ±30 V. |
| 2 | Drain | passive | Drain terminal; the absolute maximum drain-source voltage VDS is 650 V and the continuous drain current ID is 7.0 A at TC=25°C. |
| 3 | Source | passive | Source terminal; the continuous source current IS is rated at 7.0 A for the integral body diode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS=0V, ID=250µA | 3 |
| Drain-Source Leakage Current | IDSS | | | 1 | µA | VDS=650V, VGS=0V | 3 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±30V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VGS= VDS, ID=250µA | 3 |
| Static Drain-Source On State Resistance | RDS(on) | | 1.1 | 1.4 | Ω | VGS=10V, ID=3.5A | 3 |
| Continuous Source Current | IS | | | 7 | A | Integral Reverse P-N Junction Diode in the MOSFET | 3 |
| Pulsed Source Current | ISM | | | 28 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.4 | V | IS=7.0A, VGS=0V | 3 |
| Drain-Source Voltage | VDS | | | 650 | V | | 2 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | | 2 |
| Drain Current (continuous) | ID | | | 7 | A | TC = 25C | 2 |
| Drain Current (continuous) | ID | | | 4.4 | A | TC = 100C | 2 |
| Drain Current Pulsed | IDM | | | 28 | A | | 2 |
| Power Dissipation | PD | | | 46 | W | TC=25C | 2 |
| Power Dissipation derating | PD | | | 0.37 | W/C | Derate above 25C | 2 |
| Single Pulsed Avalanche Energy | EAS | | | 435 | mJ | Note 1: L=30mH, IAS=5.0A, VDD=100V, RG=25, TJ=25C | 2 |
| Reverse Diode dv/dt | dv/dt | | | 4.5 | V/ns | Note 2: VDS=0~400V, ISD<=10A, TJ=25C | 2 |
| MOSFET dv/dt Ruggedness | dv/dt | | | 50 | V/ns | Note 3: VDS=0~480V | 2 |
| Operation Junction Temperature Range | TJ | -55 | | 150 | °C | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 2 |
| Thermal Resistance, Junction-to-Case | RθJC | | 2.7 | | C/W | | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 62.5 | | C/W | | 2 |
## CAD (KiCad official)
- Symbol: `SVF7N65F`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588888771744452608) (10 pp, sha256 `767913f492042958`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/svf7n65f-datasheet.pdf)