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SVF4N65F

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Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SVF4N65F

Hangzhou Silan Microelectronics · MOSFETs · TO-220F-3

SVF4N65F from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; VGS maximum ±30 V, threshold VGS(th) 2.0 to 4.0 V at ID=250µA.
2 Drain passive Drain terminal; VDS maximum 650 V, continuous drain current 4.0 A at TC=25C and 2.5 A at TC=100C, pulsed 16 A.
3 Source passive Source terminal; continuous body-diode source current IS 4.0 A, pulsed 16 A, diode forward voltage max 1.4 V at IS=4.0A.

Key specifications

Parameter Value
Manufacturer Hangzhou Silan Microelectronics
Package TO-220F-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V TA=25C 1
Gate-Source Voltage VGS -30 30 V TA=25C 1
Drain Current ID 4 A TC=25C 1
Drain Current ID 2.5 A TC=100C 1
Drain Current Pulsed IDM 16 A 1
Power Dissipation PD 30 W TC=25C 1
Power Dissipation Derating PD 0.24 W/C Derate above 25C 1
Single Pulsed Avalanche Energy EAS 215 mJ L=30mH, IAS=3.6A, VDD=100V, RG=25, starting TJ=25C 1
Operation Junction Temperature Range TJ -55 150 C 1
Storage Temperature Range Tstg -55 150 C 1
Thermal Resistance, Junction-to-Case RθJC 4.17 C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W 2
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250µA 2
Drain-Source Leakage Current IDSS 1 µA VDS=650V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250µA 2
Static Drain-Source On State Resistance RDS(on) 2.3 2.7 Ω VGS=10V, ID=2A 2
Continuous Source Current IS 4 A Integral Reverse P-N Junction Diode in the MOSFET 2
Pulsed Source Current ISM 16 A Integral Reverse P-N Junction Diode in the MOSFET 2
Diode Forward Voltage VSD 1.4 V IS=4.0A, VGS=0V 2
Input Capacitance Ciss 430 pF VDS=25V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 55 pF VDS=25V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 4.1 pF VDS=25V, VGS=0V, f=1.0MHz 2
Turn-on Delay Time td(on) 9.9 ns VDD=325V, VGS=10V, RG=25Ω, ID=4A 2
Turn-on Rise Time tr 26 ns VDD=325V, VGS=10V, RG=25Ω, ID=4A 2
Turn-off Delay Time td(off) 28 ns VDD=325V, VGS=10V, RG=25Ω, ID=4A 2
Turn-off Fall Time tf 26 ns VDD=325V, VGS=10V, RG=25Ω, ID=4A 2
Total Gate Charge Qg 13 nC VDD=520V, VGS=10V, ID=4A 2
Gate-Source Charge Qgs 2.7 nC VDD=520V, VGS=10V, ID=4A 2
Gate-Drain Charge Qgd 6.3 nC VDD=520V, VGS=10V, ID=4A 2
Reverse Recovery Time Trr 450 ns IS=4.0A, VGS=0V, dIF/dt=100A/µs 2
Reverse Recovery Charge Qrr 1.9 µC IS=4.0A, VGS=0V, dIF/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: SVF4N65F
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Hangzhou Silan Microelectronics datasheet (10 pp, sha256 7d6681753bb2af50, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF