component
SVF2N60RDTR
Public Made by Adomby adom
Hangzhou Silan Microelectronics MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| svf2n60rdtr-etched.glb | 23d ago |
| svf2n60rdtr-etched.step | 23d ago |
| svf2n60rdtr-hero.glb | 23d ago |
| svf2n60rdtr-hero.overlay.json | 23d ago |
| svf2n60rdtr.glb | 23d ago |
| svf2n60rdtr.kicad_mod | 23d ago |
| svf2n60rdtr.kicad_sym | 23d ago |
| svf2n60rdtr.lbr | 23d ago |
| svf2n60rdtr.step | 23d ago |
SVF2N60RDTR
Hangzhou Silan Microelectronics · MOSFETs · TO-252-2
SVF2N60RDTR from Hangzhou Silan Microelectronics, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement MOSFET; the datasheet gives a gate-source voltage rating of ±30 V. |
| 2 | D | passive | Drain of the MOSFET; the datasheet rates drain-source voltage at 600 V and continuous drain current at 2.0 A (TC=25°C). |
| 3 | S | passive | Source of the MOSFET; the datasheet rates source current at 2.0 A and pulsed source current at 8.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| 漏源电压 (Drain-source voltage) | VDS | 600 | V | 2 | |||
| 栅源电压 (Gate-source voltage) | VGS | -30 | 30 | V | 2 | ||
| 漏极电流 (Drain current) | ID | 2 | A | TC=25C | 2 | ||
| 漏极电流 (Drain current) | ID | 1.3 | A | TC=100C | 2 | ||
| 漏极脉冲电流 (Drain pulsed current) | IDM | 8 | A | 2 | |||
| 耗散功率 (Power dissipation) | PD | 34 | W | TC=25C | 2 | ||
| 耗散功率降额 (Derating above 25C) | PD | 0.27 | W/C | Above 25C, reduce per degree C | 2 | ||
| 单脉冲雪崩能量 (Single pulse avalanche energy) | EAS | 115 | mJ | 2 | |||
| 体二极管dv/dt (Body diode dv/dt) | dv/dt | 4.5 | V/ns | 2 | |||
| MOS管dv/dt耐用性 (MOSFET dv/dt ruggedness) | dv/dt | 50 | V/ns | 2 | |||
| 工作结温范围 (Operating junction temperature range) | TJ | -55 | 150 | C | 2 | ||
| 贮存温度范围 (Storage temperature range) | Tstg | -55 | 150 | C | 2 | ||
| 芯片对管壳热阻 (Junction-to-case thermal resistance) | RθJC | 3.7 | C/W | 2 | |||
| 芯片对环境热阻 (Junction-to-ambient thermal resistance) | RθJA | 62 | C/W | 2 | |||
| 漏源击穿电压 (Drain-source breakdown voltage) | BVDSS | 600 | V | VGS=0V，ID=250µA | 2 | ||
| 漏源漏电流 (Zero gate voltage drain current) | IDSS | 1 | µA | VDS=600V，VGS=0V | 2 | ||
| 栅源漏电流 (Gate-body leakage current) | IGSS | -100 | 100 | nA | VGS=±30V，VDS=0V | 2 | |
| 栅极开启电压 (Gate threshold voltage) | VGS(th) | 2 | 4 | V | VGS= VDS，ID=250µA | 2 | |
| 导通电阻 (Static drain-source on-resistance) | RDS(on) | 3.7 | 4.2 | Ω | VGS=10V，ID=1.0A | 2 | |
| 源极电流 (Continuous source current) | IS | 2 | A | 3 | |||
| 源极脉冲电流 (Pulsed source current) | ISM | 8 | A | 3 | |||
| 源-漏二极管压降 (Diode forward voltage) | VSD | 1.4 | V | IS=2.0A，VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
SVF2N60RDTR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
svf2n60rdtr-etched.step/svf2n60rdtr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);svf2n60rdtr.step/svf2n60rdtr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (8 pp, sha256
0de0c9620c9f5e6e, retrieved 2026-10-19, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).