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SVF10N65F

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Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SVF10N65F

Hangzhou Silan Microelectronics · MOSFETs · TO-220F-3

SVF10N65F from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±30 V (VGS).
2 Drain passive Drain terminal of the MOSFET; drain-source voltage is rated at 650 V, with continuous drain current of 10 A at TC=25°C and 6.3 A at TC=100°C.
3 Source passive Source terminal of the MOSFET; continuous source current is limited to 10 A by the integral reverse p-n junction body diode.

Key specifications

Parameter Value
Manufacturer Hangzhou Silan Microelectronics
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V,ID=250µA 2
Drain-Source Leakage Current IDSS 1 µA VDS=650V,VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±30V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS,ID=250µA 2
Static Drain-Source On State Resistance RDS(on) 0.8 1 Ω VGS=10V,ID=5.0A 2
Continuous Source Current IS 10 A Integral reverse p-n junction diode in the MOSFET 3
Pulsed Source Current ISM 40 A 3
Diode Forward Voltage VSD 1.3 V IS=10A,VGS=0V 3
Drain-Source Voltage VDS 650 V 2
Gate-Source Voltage VGS -30 30 V 2
Drain Current ID 10 A TC=25°C 2
Drain Current ID 6.3 A TC=100°C 2
Drain Current Pulsed IDM 40 A 2
Power Dissipation PD 50 W TC=25°C 2
Single Pulsed Avalanche Energy EAS 618 mJ Note 1: L=30mH, IAS=6.0A, VDD=100V, RG=25Ω, starting TJ=25°C 2
Operation Junction Temperature Range TJ -55 150 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Power Dissipation derating PD 0.4 W/°C Derate above 25°C 2
Thermal Resistance, Junction-to-Case RθJC 2.5 °C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W 2

CAD (KiCad official)

  • Symbol: SVF10N65F
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Hangzhou Silan Microelectronics datasheet (11 pp, sha256 2f5ad8ded0cbcb2b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF