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SUP85N10-10-E3

Public Made by Adom

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SUP85N10-10-E3

Vishay Intertech · MOSFETs · TO-220AB

SUP85N10-10-E3 from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V.
2 D passive Drain, connected to the TAB; drain-source voltage 100 V max, continuous current 85 A (package limited).
3 S passive Source; continuous source-drain diode current 85 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 85 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 60 A TC = 125 °C 1
Pulsed Drain Current IDM 240 A 1
Avalanche Current IAS 75 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 280 mJ 1
Maximum Power Dissipation PD 250 W TC = 25 °C (TO-220AB and TO-263) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient, Free Air RthJA 62.5 °C/W Free Air (TO-220AB) 1
Junction-to-Case RthJC 0.6 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS = ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0085 0.0105 Ω VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance RDS(on) 0.01 0.012 Ω VGS = 4.5 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.017 Ω VGS = 10 V, ID = 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = 10 V, ID = 30 A, TJ = 175 °C 2
Total Gate Charge Qg 105 160 nC VDS = 50 V, VGS = 10 V, ID = 85 A 2
Turn-On Delay Time td(on) 12 25 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 90 135 ns 2
Turn-Off Delay Time td(off) 55 85 ns 2
Fall Time tf 130 195 ns 2
Continuous Current IS 85 A 2
Pulsed Current ISM 240 A 2
Forward Voltage VSD 1 1.5 V IF = 85 A, VGS = 0 V 2
Reverse Recovery Time trr 85 140 ns IF = 50 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 4.5 7 A 2
Reverse Recovery Charge Qrr 0.17 0.35 µC 2

CAD (KiCad official)

  • Symbol: SUP85N10-10-E3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: sup85n10-10-e3-etched.step / sup85n10-10-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sup85n10-10-e3.step / sup85n10-10-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (6 pp, sha256 85c09743db08d0e1, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF