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SUP70101EL-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SUP70101EL-GE3

Vishay Intertech · MOSFETs · TO-220AB

SUP70101EL-GE3 from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with VGS limited to ±20 V and a gate threshold of -1.5 V to -2.5 V at ID = -250 μA.
2 D passive Drain terminal, rated for VDS of -100 V and continuous ID of -120 A at TC = 25 °C (limited by package).
3 S passive Source terminal, with a body-diode continuous current IS of -110 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -100 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID -120 A TJ = 175 °C; TC = 25 °C 1
Continuous drain current ID -78 A TC = 125 °C 1
Pulsed drain current IDM -240 A 100 μs pulse 1
Avalanche current IAS -75 A L = 0.1 mH 1
Single pulse avalanche energy EAS 281 mJ 1
Power dissipation PD 375 W TC = 25 °C 1
Power dissipation PD 125 W TC = 125 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Drain-source breakdown voltage VDS -100 V VGS = 0 V, ID = -250 μA 2
Gate threshold voltage VGS(th) -1.5 -2.5 V VDS = VGS, ID = -250 μA 2
Gate-body leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -100 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -50 μA VDS = -100 V, VGS = 0 V, TJ = 125 °C 2
Zero gate voltage drain current IDSS -250 μA VDS = -100 V, VGS = 0 V, TJ = 175 °C 2
On-state drain current ID(on) -120 A VDS -5 V, VGS = -10 V 2
Drain-source on-state resistance RDS(on) 0.0081 0.0101 Ω VGS = -10 V, ID = -30 A 2
Drain-source on-state resistance RDS(on) 0.0114 0.015 Ω VGS = -4.5 V, ID = -20 A 2
Total gate charge Qg 125 190 nC VDS = -50 V, VGS = -10 V, ID = -110 A 2
Gate resistance Rg 1.3 6.5 13 Ω f = 1 MHz 2
Turn-on delay time td(on) 20 30 ns VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω 2
Rise time tr 40 60 ns VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 110 200 ns VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω 2
Fall time tf 40 60 ns VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous current (body diode) IS -110 A TC = 25 °C 2
Pulsed current (body diode) ISM -240 A TC = 25 °C 2
Forward voltage VSD -1 -1.5 V IF = -85 A, VGS = 0 V 2
Reverse recovery time trr 110 170 ns IF = -85 A, dI/dt = 100 A/μs 2
Peak reverse recovery current IRM(REC) -7 -11 A IF = -85 A, dI/dt = 100 A/μs 2
Reverse recovery charge Qrr 0.38 0.57 μC IF = -85 A, dI/dt = 100 A/μs 2
Junction-to-ambient thermal resistance RthJA 40 °C/W PCB mount 1
Junction-to-case thermal resistance RthJC 0.4 °C/W 1

CAD (KiCad official)

  • Symbol: SUP70101EL-GE3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: sup70101el-ge3-etched.step / sup70101el-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sup70101el-ge3.step / sup70101el-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 690a88d2d346de60, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF