component
SUM70101EL-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SUM70101EL-GE3
Vishay Intertech · MOSFETs · TO-263
SUM70101EL-GE3 from Vishay Intertech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level drive with RDS(on) max 0.0150 ohm specified at VGS = -4.5 V and 0.0101 ohm at -10 V, absolute maximum VGS ±20 V. |
| 2 | D | passive | Drain (middle lead, connected to the heat-sink tab); VDS rated -100 V, continuous ID -120 A at TC = 25 °C, pulsed IDM -240 A. |
| 3 | S | passive | Source; body-diode continuous current IS -110 A and pulsed ISM -240 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | -120 | A | TJ = 175 °C, TC = 25 °C | 1 | ||
| Continuous drain current | ID | -78 | A | TJ = 175 °C, TC = 125 °C | 1 | ||
| Pulsed drain current (100 μs) | IDM | -240 | A | 100 μs pulse | 1 | ||
| Avalanche current | IAS | -75 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 281 | mJ | 1 | |||
| Power dissipation | PD | 375 | W | TC = 25 °C | 1 | ||
| Power dissipation | PD | 125 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Drain-source breakdown voltage | VDS | -100 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate threshold voltage | VGS(th) | -1.5 | -2.5 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -100 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | -50 | μA | VDS = -100 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current | IDSS | -250 | μA | VDS = -100 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | -120 | A | VDS -5 V, VGS = -10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.0081 | 0.0101 | Ω | VGS = -10 V, ID = -30 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.0114 | 0.015 | Ω | VGS = -4.5 V, ID = -20 A | 2 | |
| Total gate charge | Qg | 125 | 190 | nC | VDS = -50 V, VGS = -10 V, ID = -110 A | 2 | |
| Gate resistance | Rg | 1.3 | 6.5 | 13 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 20 | 30 | ns | VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 40 | 60 | ns | VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 110 | 200 | ns | VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 40 | 60 | ns | VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Continuous current (body diode) | IS | -110 | A | TC = 25 °C | 2 | ||
| Pulsed current (body diode) | ISM | -240 | A | 2 | |||
| Forward voltage | VSD | -1 | -1.5 | V | IF = -85 A, VGS = 0 V | 2 | |
| Reverse recovery time | trr | 110 | 170 | ns | IF = -85 A, dI/dt = 100 A/μs | 2 | |
| Peak reverse recovery current | IRM(REC) | -7 | -11 | A | IF = -85 A, dI/dt = 100 A/μs | 2 | |
| Reverse recovery charge | Qrr | 0.38 | 0.57 | μC | IF = -85 A, dI/dt = 100 A/μs | 2 | |
| Junction-to-ambient thermal resistance (PCB mount) | RthJA | 40 | °C/W | PCB mount | 1 | ||
| Junction-to-case thermal resistance | RthJC | 0.4 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SUM70101EL-GE3 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
sum70101el-ge3-etched.step/sum70101el-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sum70101el-ge3.step/sum70101el-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
89ffd7a4f65c892a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SUM70101EL-GE3
**Vishay Intertech** · MOSFETs · TO-263
SUM70101EL-GE3 from Vishay Intertech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level drive with RDS(on) max 0.0150 ohm specified at VGS = -4.5 V and 0.0101 ohm at -10 V, absolute maximum VGS ±20 V. |
| 2 | D | passive | Drain (middle lead, connected to the heat-sink tab); VDS rated -100 V, continuous ID -120 A at TC = 25 °C, pulsed IDM -240 A. |
| 3 | S | passive | Source; body-diode continuous current IS -110 A and pulsed ISM -240 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -100 | | | V | | 1 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current | ID | -120 | | | A | TJ = 175 °C, TC = 25 °C | 1 |
| Continuous drain current | ID | -78 | | | A | TJ = 175 °C, TC = 125 °C | 1 |
| Pulsed drain current (100 μs) | IDM | -240 | | | A | 100 μs pulse | 1 |
| Avalanche current | IAS | -75 | | | A | L = 0.1 mH | 1 |
| Single pulse avalanche energy | EAS | | | 281 | mJ | | 1 |
| Power dissipation | PD | | | 375 | W | TC = 25 °C | 1 |
| Power dissipation | PD | | | 125 | W | TC = 125 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Drain-source breakdown voltage | VDS | -100 | | | V | VGS = 0 V, ID = -250 μA | 2 |
| Gate threshold voltage | VGS(th) | -1.5 | | -2.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-body leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | μA | VDS = -100 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS | | | -50 | μA | VDS = -100 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero gate voltage drain current | IDSS | | | -250 | μA | VDS = -100 V, VGS = 0 V, TJ = 175 °C | 2 |
| On-state drain current | ID(on) | -120 | | | A | VDS -5 V, VGS = -10 V | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.0081 | 0.0101 | Ω | VGS = -10 V, ID = -30 A | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.0114 | 0.015 | Ω | VGS = -4.5 V, ID = -20 A | 2 |
| Total gate charge | Qg | | 125 | 190 | nC | VDS = -50 V, VGS = -10 V, ID = -110 A | 2 |
| Gate resistance | Rg | 1.3 | 6.5 | 13 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | | 20 | 30 | ns | VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Rise time | tr | | 40 | 60 | ns | VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Turn-off delay time | td(off) | | 110 | 200 | ns | VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Fall time | tf | | 40 | 60 | ns | VDD = -50 V, RL = 0.71 Ω, ID -70 A, VGEN = -10 V, Rg = 1 Ω | 2 |
| Continuous current (body diode) | IS | | | -110 | A | TC = 25 °C | 2 |
| Pulsed current (body diode) | ISM | | | -240 | A | | 2 |
| Forward voltage | VSD | | -1 | -1.5 | V | IF = -85 A, VGS = 0 V | 2 |
| Reverse recovery time | trr | | 110 | 170 | ns | IF = -85 A, dI/dt = 100 A/μs | 2 |
| Peak reverse recovery current | IRM(REC) | | -7 | -11 | A | IF = -85 A, dI/dt = 100 A/μs | 2 |
| Reverse recovery charge | Qrr | | 0.38 | 0.57 | μC | IF = -85 A, dI/dt = 100 A/μs | 2 |
| Junction-to-ambient thermal resistance (PCB mount) | RthJA | | 40 | | °C/W | PCB mount | 1 |
| Junction-to-case thermal resistance | RthJC | | 0.4 | | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `SUM70101EL-GE3`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `sum70101el-ge3-etched.step` / `sum70101el-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sum70101el-ge3.step` / `sum70101el-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589839716544503808) (9 pp, sha256 `89ffd7a4f65c892a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sum70101el-ge3-datasheet.pdf)