component
SUD19P06-60-E3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
SUD19P06-60-E3
Vishay Intertech · MOSFETs · TO-252
SUD19P06-60-E3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated at ±20 V (VGS limit in the absolute maximum ratings). |
| 2 | D | passive | Drain of the P-channel MOSFET, electrically connected to the tab, rated for a drain-source voltage of -60 V and a continuous drain current of -18.3 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET; the datasheet gives no separate pin-level rating for this terminal beyond the device absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -18.3 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -8.19 | A | TJ = 150 °C; TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Avalanche Current, Single Pulse | IAS | -22 | A | L = 0.1 mH | 1 | ||
| Repetitive Avalanche Energy, Single Pulse | EAS | 24.2 | mJ | Single Pulse | 1 | ||
| Power Dissipation | PD | 38.5 | W | TC = 25 °C | 1 | ||
| Power Dissipation | PD | 2.3 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 17 | 21 | °C/W | t 10 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 45 | 55 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Case | RthJC | 2.7 | 3.25 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = - 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -125 | µA | VDS = - 60 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS - 5 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.048 | 0.06 | Ω | VGS = - 10 V, ID = - 10 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.102 | Ω | VGS = - 10 V, ID = - 10 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.12 | Ω | VGS = - 10 V, ID = - 10 A, TJ = 150 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.061 | 0.077 | Ω | VGS = - 4.5 V, ID = - 5 A | 2 | |
| Input Capacitance | Ciss | 1140 | 1710 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 26 | 40 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 10 A | 2 | |
| Turn-On Delay Time | td(on) | 8 | 15 | ns | VDD = - 30 V, RL = 3, ID - 19 A, VGEN = - 10 V, Rg = 2.5 | 2 | |
| Rise Time | tr | 9 | 15 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 65 | 100 | ns | 2 | ||
| Fall Time | tf | 30 | 45 | ns | 2 | ||
| Continuous Current | IS | -30 | A | 2 | |||
| Pulsed Current | ISM | -30 | A | 2 | |||
| Forward Voltage | VSD | -1 | -1.5 | V | IF = - 19 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 41 | 61 | ns | IF = - 19 A, di/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
SUD19P06-60-E3 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sud19p06-60-e3-etched.step/sud19p06-60-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sud19p06-60-e3.step/sud19p06-60-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
5239576ec6e6f173, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SUD19P06-60-E3
**Vishay Intertech** · MOSFETs · TO-252
SUD19P06-60-E3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated at ±20 V (VGS limit in the absolute maximum ratings). |
| 2 | D | passive | Drain of the P-channel MOSFET, electrically connected to the tab, rated for a drain-source voltage of -60 V and a continuous drain current of -18.3 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET; the datasheet gives no separate pin-level rating for this terminal beyond the device absolute maximum ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -18.3 | | | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID | -8.19 | | | A | TJ = 150 °C; TC = 125 °C | 1 |
| Pulsed Drain Current | IDM | -30 | | | A | | 1 |
| Avalanche Current, Single Pulse | IAS | -22 | | | A | L = 0.1 mH | 1 |
| Repetitive Avalanche Energy, Single Pulse | EAS | | | 24.2 | mJ | Single Pulse | 1 |
| Power Dissipation | PD | | | 38.5 | W | TC = 25 °C | 1 |
| Power Dissipation | PD | | | 2.3 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 17 | 21 | °C/W | t 10 s | 1 |
| Maximum Junction-to-Ambient | RthJA | | 45 | 55 | °C/W | Steady State | 1 |
| Maximum Junction-to-Case | RthJC | | 2.7 | 3.25 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | -60 | | | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | -1 | | | µA | VDS = - 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | -50 | | | µA | VDS = - 60 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | -125 | | | µA | VDS = - 60 V, VGS = 0 V, TJ = 150 °C | 2 |
| On-State Drain Current | ID(on) | -30 | | | A | VDS - 5 V, VGS = - 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.048 | 0.06 | Ω | VGS = - 10 V, ID = - 10 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.102 | Ω | VGS = - 10 V, ID = - 10 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.12 | Ω | VGS = - 10 V, ID = - 10 A, TJ = 150 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.061 | 0.077 | Ω | VGS = - 4.5 V, ID = - 5 A | 2 |
| Input Capacitance | Ciss | | 1140 | 1710 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 26 | 40 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 10 A | 2 |
| Turn-On Delay Time | td(on) | | 8 | 15 | ns | VDD = - 30 V, RL = 3, ID - 19 A, VGEN = - 10 V, Rg = 2.5 | 2 |
| Rise Time | tr | | 9 | 15 | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 65 | 100 | ns | | 2 |
| Fall Time | tf | | 30 | 45 | ns | | 2 |
| Continuous Current | IS | -30 | | | A | | 2 |
| Pulsed Current | ISM | -30 | | | A | | 2 |
| Forward Voltage | VSD | | -1 | -1.5 | V | IF = - 19 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr | | 41 | 61 | ns | IF = - 19 A, di/dt = 100 A/µs | 2 |
## CAD (KiCad official)
- Symbol: `SUD19P06-60-E3`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sud19p06-60-e3-etched.step` / `sud19p06-60-e3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sud19p06-60-e3.step` / `sud19p06-60-e3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590456873004019712) (9 pp, sha256 `5239576ec6e6f173`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sud19p06-60-e3-datasheet.pdf)