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SUD10P06-280L-E3-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SUD10P06-280L-E3-VB

VBsemi Elec · MOSFETs · TO-252

SUD10P06-280L-E3-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for VGS of ±20 V with a threshold of -1.0 to -3.0 V at ID = -250 µA.
2 D passive Drain, rated for VDS of -60 V and continuous ID of -30 A at TC = 25 °C (-25 A at 100 °C); connected to the mounting tab.
3 S passive Source, with a continuing diode-conduction source current IS of -20 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage VGS(th) -1 -2 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = - 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -150 µA VDS = - 60 V, VGS = 0 V, TJ = 175 °C 2
Drain-Source On-State Resistance rDS(on) 0.1 Ω VGS = - 10 V, ID = - 5 A, TJ = 125 °C 2
Drain-Source On-State Resistance rDS(on) 0.15 Ω VGS = - 10 V, ID = - 5 A, TJ = 175 °C 2
Drain-Source On-State Resistance rDS(on) 0.072 Ω VGS = - 4.5 V, ID = - 2 A 2
Forward Voltage VSD -0.9 -1.3 V IF = - 2 A, VGS = 0 V 2
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID -30 A TC = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID -25 A TC = 100 °C, TJ = 175 °C 1
Continuing Source Current (Diode Conduction) IS -20 A TC = 25 °C 1
Avalanche Current IAS -20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 7.2 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 34 W TC = 25 °C 1
Maximum Power Dissipation PD 4 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 20 25 °C/W t ≤ 10 sec 1
Junction-to-Ambient Thermal Resistance RthJA 62 75 °C/W Steady State 1
Junction-to-Case Thermal Resistance RthJC 56 °C/W 1
Forward Transconductance gfs 8 S VDS = - 15 V, ID = - 5 A 2
Input Capacitance Ciss 1000 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 120 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 100 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 10 nC VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A 2
Gate Resistance Rg 8 Ω f = 1 MHz 2
Reverse Recovery Time trr 50 ns IF = - 8 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: SUD10P06-280L-E3-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sud10p06-280l-e3-vb-etched.step / sud10p06-280l-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sud10p06-280l-e3-vb.step / sud10p06-280l-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 2d4316209df32b1b, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF