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STWA20N95K5

STMicroelectronics · MOSFETs · TO-247

STWA20N95K5 from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate-source voltage is rated ±30 V (VGS absolute maximum) and the gate-body leakage is ±10 μA at VGS = ±25 V.
2 D passive Drain-source breakdown voltage V(BR)DSS is 950 V minimum at ID = 1 mA, and continuous drain current is 17.5 A at TC = 25 °C.
3 S passive Source-drain continuous current ISD is 17.5 A, with pulsed source-drain current of 70 A, and forward on voltage VSD is 1.5 V at ISD = 17.5 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STWA20N95K5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: stwa20n95k5-etched.step / stwa20n95k5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stwa20n95k5.step / stwa20n95k5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 a94ed9cc27a0971e, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF