component
STW30N65M5
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTW30N65M5
STMicroelectronics · MOSFETs · TO-247-3
STW30N65M5 from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with gate-source voltage limited to ±25 V and a threshold of 3 V min, 4 V typ, 5 V max at ID = 250 µA. |
| 2 | D | passive | Drain, also connected to the TAB; drain-source breakdown voltage is 650 V min and continuous drain current is 22 A at TC = 25 °C. |
| 3 | S | passive | Source; the source-drain body diode carries up to 22 A continuous (88 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 | 25 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 22 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 13 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 88 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation at TC = 25 °C | PTOT | 140 | W | TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 15 | V/ns | ISD ≤ 21 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Avalanche current, repetitive or not-repetitive | IAR | 7 | A | pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 500 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | ID = 1 mA, VGS = 0 V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 650 V | 3 | ||
| Zero gate voltage drain current (TC = 125 °C) | IDSS | 100 | µA | VGS = 0 V, VDS = 650 V, TC = 125 °C (specified by design, not tested in production) | 3 | ||
| Gate body leakage current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±25 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 125 | 139 | mΩ | VGS = 10 V, ID = 11 A | 3 | |
| Source-drain current | ISD | 22 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 88 | A | 4 | |||
| Forward on voltage | VSD | 1.5 | V | ISD = 22 A, VGS = 0 V | 4 | ||
| Thermal resistance, junction-to-case | RthJC | 0.83 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient (TO-247 column) | RthJA | 50 | °C/W | TO-247 column of Table 2 | 2 |
CAD (KiCad official)
- Symbol:
STW30N65M5 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
stw30n65m5-etched.step/stw30n65m5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stw30n65m5.step/stw30n65m5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (20 pp, sha256
f97e95cc3bc5982f, retrieved 2026-10-11, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).