# STW10NK80Z

**STMicroelectronics** · MOSFETs · TO-247-3

STW10NK80Z from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the Zener-protected N-channel SuperMESH MOSFET, rated for a gate-source voltage of ±30 V with a 4 kV human body model ESD rating. |
| 2 | D | passive | Drain of the MOSFET, also connected to the TAB (heat sink), rated for 800 V drain-source voltage and 9 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source of the MOSFET, carrying the source-drain diode rated for 9 A continuous and 36 A pulsed source-drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `STW10NK80Z`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `stw10nk80z-etched.step` / `stw10nk80z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stw10nk80z.step` / `stw10nk80z.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stw10nk80z.pdf) (18 pp, sha256 `ad8cf4ebe66b66c7`, retrieved 2026-10-08, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stw10nk80z-datasheet.pdf)