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STTH8L06G-TR

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STMicroelectronics Diodes - General Purpose, D2PAK. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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STTH8L06G-TR

STMicroelectronics · Diodes - General Purpose · D2PAK

STTH8L06G-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode terminal; repetitive peak reverse voltage VRRM = 600 V maximum, reverse leakage current IR = 8 µA at 25°C and 200 µA at 150°C maximum.
2 A passive Anode terminal (exposed heat sink tab); forward average current IF(AV) = 8 A, forward voltage drop VF = 1.3 V at 25°C maximum and 0.85 V at 150°C typical.
3 A passive Anode terminal (lead); forward average current IF(AV) = 8 A, forward voltage drop VF = 1.3 V at 25°C maximum and 0.85 V at 150°C typical.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 600 V 2
Forward rms current IF(RMS) 30 A TO-220AC / TO-220FPAC / D2PAK 2
Average forward current IF(AV) 8 A δ = 0.5; TO-220AC / D2PAK Tc = 150 °C 2
Surge non repetitive forward current IFSM 120 A tp = 10 ms sinusoidal 2
Storage temperature range Tstg -65 175 °C 2
Operating junction temperature range Tj -40 175 °C 2
Thermal resistance junction to case (value max) Rth(j-c) 2.5 °C/W TO-220AC / D2PAK 2
Reverse leakage current IR 8 µA Tj = 25 °C; VR = VRRM 2
Reverse leakage current IR 16 200 µA Tj = 150 °C; VR = VRRM 2
Forward voltage drop VF 1.3 V Tj = 25 °C; IF = 8 A 2
Forward voltage drop VF 0.85 1.05 V Tj = 150 °C; IF = 8 A 2
Reverse recovery time trr 75 105 ns Tj = 25 °C; IF = 1 A, dIF/dt = -50 A/µs; VR = 30 V 2
Reverse recovery current IRM 7.2 10 A Tj = 125 °C; IF = 8 A, dIF/dt = 100 A/µs; VR = 400 V 2
Forward recovery time tfr 150 ns Tj = 25 °C; IF = 8 A, dIF/dt = 100 A/µs; VFR = 1.1 x VFmax 2
Forward recovery voltage VFP 6 V IF = 8 A, dIF/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: STTH8L06G-TR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stth8l06g-tr-etched.step / stth8l06g-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stth8l06g-tr.step / stth8l06g-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (11 pp, sha256 44344d7f7cc2a31c, retrieved 2026-10-22, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF