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STTH812FP

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STMicroelectronics Diodes - Fast Recovery Rectifiers, TO-220AC. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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STTH812FP

STMicroelectronics · Diodes - Fast Recovery Rectifiers · TO-220AC

STTH812FP from STMicroelectronics, in a TO-220AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the 1200 V ultrafast diode (VRRM 1200 V, IF(AV) 8 A at Tc = 75 °C for TO-220FPAC).
2 A passive Anode of the 1200 V ultrafast diode (IFSM 80 A for tp = 10 ms sinusoidal, Tj max 175 °C).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AC
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 1200 V 2
RMS forward current IF(RMS) 30 A TO-220AC / D2PAK / TO-220FPAC 2
Average forward current, δ = 0.5 IF(AV) 8 A TO-220FPAC Tc = 75° C 2
Repetitive peak forward current IFRM 100 A tp = 5 µs, F = 5 kHz square 2
Surge non repetitive forward current IFSM 80 A tp = 10 ms Sinusoidal 2
Storage temperature range Tstg -65 175 °C 2
Maximum operating junction temperature Tj 175 °C 2
Junction to case thermal resistance Rth(j-c) 5.4 °C/W TO-220FPAC 2
Reverse leakage current IR 8 µA Tj = 25° C, VR = VRRM 2
Reverse leakage current IR 5 50 µA Tj = 125° C, VR = VRRM 2
Forward voltage drop VF 2.2 V Tj = 25° C, IF = 8 A 2
Forward voltage drop VF 1.3 2 V Tj = 125° C, IF = 8 A 2
Forward voltage drop VF 1.25 1.9 V Tj = 150° C, IF = 8 A 2
Reverse recovery time trr 100 ns IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C 3
Reverse recovery time trr 50 70 ns IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 3
Reverse recovery current IRM 14 21 A IF = 8 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 3
Softness factor S 2 IF = 8 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 3
Forward recovery time tfr 400 ns IF = 8 A dIF/dt = 50 A/µs, VFR = 1.5 x VFmax, Tj = 25° C 3
Forward recovery voltage VFP 7 V IF = 8 A, dIF/dt = 50 A/µs, Tj = 25° C 3

CAD (KiCad official)

  • Symbol: STTH812FP
  • Footprint: Package_TO_SOT_THT:TO-220-2_Vertical
  • 3D model: TO-220AC (KiCad packages3D, STEP)
  • 3D model files: stth812fp-etched.step / stth812fp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stth812fp.step / stth812fp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (11 pp, sha256 e16a8ecf740d13f7, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF