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STTH806TTI

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STMicroelectronics Fast Recovery / High Efficiency Diodes, ITO-220AB-3. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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STTH806TTI

STMicroelectronics · Fast Recovery / High Efficiency Diodes · ITO-220AB-3

STTH806TTI from STMicroelectronics, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the first 300V diode, the input end of the series pair (600V VRRM across pins 1 and 3, IF(AV) 8A).
2 M passive Midpoint between the two series 300V diodes (cathode of the first, anode of the second), brought out as the centre lead.
3 K passive Cathode of the second 300V diode, the output end of the series pair (600V VRRM across pins 1 and 3).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package ITO-220AB-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 600 V 1
RMS forward current IF(RMS) 14 A 1
Surge non repetitive forward current IFSM 80 A tp = 10 ms sinusoidal 1
Storage temperature range Tstg -65 150 °C 1
Maximum operating junction temperature Tj 150 °C 1
Average forward current (limiting value, both diodes in series) IF(AV) 8 A limiting values for both diodes in series 1
Insulated voltage (insulated version) 2500 V(RMS) insulated version 1
Reverse leakage current IR 10 µA VR = VRRM, Tj = 25°C 2
Reverse leakage current IR 15 100 µA VR = VRRM, Tj = 125°C 2
Forward voltage drop VF 3.6 V IF = 8 A, Tj = 25°C 2
Forward voltage drop VF 2.1 2.6 V IF = 8 A, Tj = 125°C 2
Reverse recovery time trr 13 ns IF = 0.5 A, Irr = 0.25 A, IR = 1 A, Tj = 25°C 2
Reverse recovery time trr 30 ns IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V 2
Peak reverse recovery current IRM 4 5.5 A VR = 400 V, IF = 8 A, dIF/dt = -200 A/µs, Tj = 125°C 2
Softness factor Sfactor 0.4 - 2
Forward recovery time tfr 200 ns IF = 8 A, dIF/dt = 100 A/µs, measured at 1.1 x VF max, Tj = 25°C 2
Transient peak forward voltage VFP 7 V IF = 8 A, dIF/dt = 100 A/µs, Tj = 25°C 2
Junction to case thermal resistance (per diode) Rth (j-c) 5 °C/W Per diode 2
Coupling thermal resistance Rth (c) 0.2 Coupling 2
Junction to case thermal resistance (total) Rth (j-c) 2.6 Total 2
Conduction power dissipation for both diodes P1 27 W IF(AV) = 8 A, δ = 0.5, Tc = 80°C 2
Junction capacitance (insulated version) 7 pF insulated version 1

CAD (KiCad official)

  • Symbol: STTH806TTI
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (5 pp, sha256 7b3b4125db51b2a4, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF