component

STTH2R06S

Public Made by Adom

by adom

STMicroelectronics Fast Recovery / High Efficiency Diodes, SMC. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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stth2r06s-etched.step stth2r06s: factory component page (tier=mfr) · Ray 3d ago
stth2r06s-hero.glb stth2r06s: hero GLB from the etched model (keeps the MPN mark) · Ray 3d ago
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STTH2R06S

STMicroelectronics · Fast Recovery / High Efficiency Diodes · SMC

STTH2R06S from STMicroelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the 600 V, 2 A ultrafast diode, marked by the band on the package; positive terminal when the diode conducts in reverse (VRRM 600 V).
2 A passive Anode of the diode; forward current IF(AV) 2 A at TL = 115 °C (δ = 0.5) for SMC, VF max 1.7 V at 2 A, 25 °C.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SMC
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 600 V 2
Forward rms current IF(RMS) 7 A 2
Average forward current IF(AV) 2 A δ = 0.5, SMC TL = 115 °C 2
Surge non repetitive forward current IFSM 30 A tp = 10ms sinusoidal, SMC 2
Storage temperature range Tstg -65 175 °C 2
Operating junction temperature range Tj -40 175 °C 2
Thermal resistance junction to lead Rth(j-l) 20 °C/W SMC 2
Reverse leakage current IR 2 µA Tj = 25 °C, VR = VRRM 2
Reverse leakage current IR 12 85 µA Tj = 150 °C, VR = VRRM 2
Forward voltage drop VF 1.7 V Tj = 25 °C, IF = 2 A 2
Forward voltage drop VF 1 1.25 V Tj = 150 °C, IF = 2 A 2
Reverse recovery time trr 30 ns Tj = 25 °C, IF = 0.5 A, Irr = 0.25 A, IR = 1 A 3
Reverse recovery time trr 35 50 ns Tj = 25 °C, IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V 3
Forward recovery time tfr 100 ns Tj = 25 °C, IF = 2 A, dIF/dt = 100 A/µs, VFR = 1.1 x VFmax 3
Forward recovery voltage VFP 10 V Tj = 25 °C, IF = 2 A, dIF/dt = 100 A/µs 3

CAD (KiCad official)

  • Symbol: STTH2R06S
  • Footprint: Diode_SMD:D_SMC
  • 3D model: SMC (KiCad packages3D, STEP)
  • 3D model files: stth2r06s-etched.step / stth2r06s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stth2r06s.step / stth2r06s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (10 pp, sha256 abec95cba98eec35, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF