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Contents

README

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STTH2003CG-TR

STMicroelectronics · Diodes - Fast Recovery Rectifiers · D2PAK

STTH2003CG-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1 of the dual center-tap pair (2 x 10 A, VRRM 300 V).
2 K passive Common cathode of both diodes, also connected to the tab.
3 A2 passive Anode of diode 2 of the dual center-tap pair (2 x 10 A, VRRM 300 V).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse leakage current IR 20 µA VR = 300 V, Tj = 25°C 2
Reverse leakage current IR 30 300 µA VR = 300 V, Tj = 125°C 2
Forward voltage drop VF 1.25 V IF = 10 A, Tj = 25°C 2
Forward voltage drop VF 0.85 1 V IF = 10 A, Tj = 125°C 2
Reverse recovery time trr 25 ns IF = 0.5 A Irr = 0.25 A IR = 1 A, Tj = 25°C 2
Reverse recovery time trr 35 ns IF = 1 A dIF/dt = -50 A/µs VR = 30 V, Tj = 25°C 2
Junction to case thermal resistance per diode Rth(j-c) 2.5 °C/W TO-220AB / D2PAK / I2PAK, per diode 2
Junction to case thermal resistance total Rth(j-c) 1.3 °C/W TO-220AB / D2PAK / I2PAK, total 2
Coupling thermal resistance Rth(c) 0.1 °C/W TO-220AB / D2PAK / I2PAK, coupling 2
Repetitive peak reverse voltage VRRM 300 V 1
RMS forward current IF(RMS) 30 A 1
Average forward current per diode IF(AV) 10 A D2PAK, Tc=140°C, δ = 0.5, per diode 1
Average forward current per device IF(AV) 20 A D2PAK, Tc=140°C, δ = 0.5, per device 1
Surge non repetitive forward current IFSM 110 A tp = 10 ms sinusoidal 1
Non repetitive avalanche current IRSM 5 A tp = 20 µs square 1
Storage temperature range Tstg -65 175 °C 1
Maximum operating junction temperature Tj 175 °C 1
Forward recovery time tfr 230 ns IF = 10 A dIF/dt = 100 A/µs VFR = 1.1 x VF max., Tj = 25°C 2
Peak forward voltage VFP 3.5 V IF = 10 A dIF/dt = 100 A/µs VFR = 1.1 x VF max., Tj = 25°C 2
Softness factor Sfactor 0.3 Vcc = 200V IF = 10 A dIF/dt = 200 A/µs, Tj = 125°C 2
Peak reverse recovery current IRM 8 A Vcc = 200V IF = 10 A dIF/dt = 200 A/µs, Tj = 125°C 2

CAD (KiCad official)

  • Symbol: STTH2003CG-TR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stth2003cg-tr-etched.step / stth2003cg-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stth2003cg-tr.step / stth2003cg-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (8 pp, sha256 519014f2a6b1a2f8, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF