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STTH2002G-TR

Public Made by Adom

by adom

STMicroelectronics Fast Recovery / High Efficiency Diodes, D2PAK. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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STTH2002G-TR

STMicroelectronics · Fast Recovery / High Efficiency Diodes · D2PAK

STTH2002G-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected Not connected; the D²PAK pinout drawing on the cover page labels this lead NC.
2 K passive Cathode, connected to the thermal tab; the pinout drawing labels the tab K, and the 200 V VRRM and 20 A IF(AV) ratings apply to the device.
3 A passive Anode of the rectifier; the pinout drawing labels this lead A, and the device is rated for 200 V VRRM and 20 A IF(AV).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 200 V 2
Forward rms current IF(RMS) 35 A 2
Average forward current IF(AV) 20 A δ = 0.5, square wave; TO-220AC, D2PAK TC = 120 °C 2
Surge non repetitive forward current IFSM 175 A tp = 10 ms sinusoidal 2
Storage temperature range Tstg -65 175 °C 2
Maximum operating junction temperature Tj 175 °C 2
Junction to case thermal resistance Rth(j-c) 2.4 °C/W TO-220AC, D2PAK 2
Reverse leakage current IR 10 µA Tj = 25 °C; VR = VRRM 2
Reverse leakage current IR 10 100 µA Tj = 125 °C; VR = VRRM 2
Forward voltage drop VF 1 1.1 V Tj = 25 °C; IF = 20 A; pulse tp = 380 µs, δ < 2% 2
Forward voltage drop VF 0.86 0.95 V Tj = 150 °C; IF = 20 A; pulse tp = 380 µs, δ < 2% 2
Forward voltage drop VF 1.15 V Tj = 25 °C; IF = 25 A; pulse tp = 380 µs, δ < 2% 2
Forward voltage drop VF 0.94 1.05 V Tj = 125 °C; IF = 25 A; pulse tp = 380 µs, δ < 2% 2
Forward voltage drop VF 0.9 1 V Tj = 150 °C; IF = 25 A; pulse tp = 380 µs, δ < 2% 2
Reverse recovery time trr 16 20 ns Tj = 25 °C; IF = 1 A; dIF/dt = -200 A/µs; VR = 30 V 3
Reverse recovery time trr 33 40 ns Tj = 25 °C; IF = 1 A; dIF/dt = -50 A/µs; VR = 30 V 3
Forward recovery time tfr 230 ns Tj = 25 °C; IF = 20 A; dIF/dt = 100 A/µs; VFR = 1.1 x VFmax 3
Forward recovery voltage VFP 2 V Tj = 25 °C; IF = 20 A; dIF/dt = 100 A/µs; VFR = 1.1 x VFmax 3
Reverse recovery current IRM 8 10 A Tj = 125 °C; IF = 20 A; dIF/dt = -100 A/µs; VR = 160 V 3

CAD (KiCad official)

  • Symbol: STTH2002G-TR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stth2002g-tr-etched.step / stth2002g-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stth2002g-tr.step / stth2002g-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 985cb3d43a2532fa, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF