component
STTH1R02ZFY
Public Made by Adomby adom
STMicroelectronics Fast Recovery / High Efficiency Diodes, SOD-123F. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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STTH1R02ZFY
STMicroelectronics · Fast Recovery / High Efficiency Diodes · SOD-123F
STTH1R02ZFY from STMicroelectronics, in a SOD-123F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SOD-123F |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 200 | V | Tj = -40 °C | 2 | ||
| Average forward current | IF(AV) | 1 | A | Tlead = 153 °C, δ = 0.5 square wave | 2 | ||
| Surge non repetitive forward current | IFSM | 25 | A | tp = 10 ms sinusoidal | 2 | ||
| Storage temperature range | Tstg | -65 | 175 | °C | 2 | ||
| Maximum operating junction temperature | Tj | -40 | 175 | °C | 2 | ||
| Junction to lead thermal resistance | Rth(j-l) | 23 | °C/W | 2 | |||
| Reverse leakage current | IR | 0.5 | µA | Tj = 25 °C, VR = VRRM | 2 | ||
| Reverse leakage current | IR | 1 | 10 | µA | Tj = 125 °C, VR = VRRM | 2 | |
| Forward voltage drop | VF | 0.87 | 1 | V | Tj = 25 °C, IF = 1 A | 2 | |
| Forward voltage drop | VF | 0.75 | 0.85 | V | Tj = 125 °C, IF = 1 A | 2 | |
| Reverse recovery time | trr | 25 | 32 | ns | IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V, Tj = 25 °C | 2 | |
| Reverse recovery time | trr | 30 | ns | IF = 1 A, dIF/dt = 100 A/µs, VR = 160 V, Tj = 125 °C | 2 | ||
| Reverse recovery current | IRM | 2.2 | A | 2 | |||
| Reverse recovery charges | Qrr | 34 | nC | 2 |
CAD (KiCad official)
- Symbol:
STTH1R02ZFY - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123F (KiCad packages3D, STEP)
- 3D model files:
stth1r02zfy-etched.step/stth1r02zfy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stth1r02zfy.step/stth1r02zfy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (8 pp, sha256
edde38ce537ac9cb, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STTH1R02ZFY
**STMicroelectronics** · Fast Recovery / High Efficiency Diodes · SOD-123F
STTH1R02ZFY from STMicroelectronics, in a SOD-123F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SOD-123F |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | | | 200 | V | Tj = -40 °C | 2 |
| Average forward current | IF(AV) | | | 1 | A | Tlead = 153 °C, δ = 0.5 square wave | 2 |
| Surge non repetitive forward current | IFSM | | | 25 | A | tp = 10 ms sinusoidal | 2 |
| Storage temperature range | Tstg | -65 | | 175 | °C | | 2 |
| Maximum operating junction temperature | Tj | -40 | | 175 | °C | | 2 |
| Junction to lead thermal resistance | Rth(j-l) | | | 23 | °C/W | | 2 |
| Reverse leakage current | IR | | | 0.5 | µA | Tj = 25 °C, VR = VRRM | 2 |
| Reverse leakage current | IR | | 1 | 10 | µA | Tj = 125 °C, VR = VRRM | 2 |
| Forward voltage drop | VF | | 0.87 | 1 | V | Tj = 25 °C, IF = 1 A | 2 |
| Forward voltage drop | VF | | 0.75 | 0.85 | V | Tj = 125 °C, IF = 1 A | 2 |
| Reverse recovery time | trr | | 25 | 32 | ns | IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V, Tj = 25 °C | 2 |
| Reverse recovery time | trr | | | 30 | ns | IF = 1 A, dIF/dt = 100 A/µs, VR = 160 V, Tj = 125 °C | 2 |
| Reverse recovery current | IRM | | | 2.2 | A | | 2 |
| Reverse recovery charges | Qrr | | | 34 | nC | | 2 |
## CAD (KiCad official)
- Symbol: `STTH1R02ZFY`
- Footprint: `Diode_SMD:D_SOD-123F`
- 3D model: SOD-123F (KiCad packages3D, STEP)
- 3D model files: `stth1r02zfy-etched.step` / `stth1r02zfy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stth1r02zfy.step` / `stth1r02zfy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588935703589347328) (8 pp, sha256 `edde38ce537ac9cb`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stth1r02zfy-datasheet.pdf)