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Contents

README

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STTH1602CT

STMicroelectronics · Diodes - General Purpose · TO-220

STTH1602CT from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1, rated for VRRM 200 V and IF(AV) 10 A per diode at TC = 140 °C (TO-220AB).
2 K passive Common cathode of the dual center-tap rectifier, also connected to the tab, with 16 A (per device, TC = 140 °C) average forward current for the TO-220AB.
3 A2 passive Anode of diode 2, rated for VRRM 200 V and IF(AV) 10 A per diode at TC = 140 °C (TO-220AB).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 200 V per diode 2
Forward rms current IF(RMS) 30 A per diode 2
Average forward current, per diode IF(AV) 8 A TO-220AB, TC = 150 °C, δ = 0.5, square wave, per diode 2
Average forward current, per device IF(AV) 16 A TO-220AB, TC = 140 °C, δ = 0.5, square wave, per device 2
Average forward current, per diode IF(AV) 10 A TO-220AB, TC = 140 °C, δ = 0.5, square wave, per diode 2
Average forward current, per device IF(AV) 20 A TO-220AB, TC = 130 °C, δ = 0.5, square wave, per device 2
Surge non repetitive forward current IFSM 80 A tp = 10 ms sinusoidal 2
Storage temperature range Tstg -65 175 °C 2
Maximum operating junction temperature Tj 175 °C 2
Reverse leakage current IR 6 µA Tj = 25 °C, VR = VRRM 3
Reverse leakage current IR 4 60 µA Tj = 125 °C, VR = VRRM 3
Forward voltage drop VF 1.1 V Tj = 25 °C, IF = 8 A 3
Forward voltage drop VF 0.78 0.89 V Tj = 150 °C, IF = 8 A 3
Forward voltage drop VF 1.25 V Tj = 25 °C, IF = 16 A 3
Forward voltage drop VF 1.05 V Tj = 150 °C, IF = 16 A 3
Reverse recovery time trr 21 26 ns Tj = 25 °C, IF = 1 A, VR = 30 V, dIF/dt = 100 A/µs 3
Reverse recovery current IRM 6.8 8.8 A Tj = 125 °C, IF = 8 A, VR = 160 V, dIF/dt = 200 A/µs 3
Forward recovery time tfr 160 ns Tj = 25 °C, IF = 8 A, dIF/dt = 100 A/µs, VFR = 1.1 x VFmax 3
Forward recovery voltage VFP 2.4 V IF = 8 A, dIF/dt = 100 A/µs 3
Junction to case thermal resistance, per diode Rth(j-c) 3 °C/W TO-220AB, per diode 2
Junction to case thermal resistance, per device Rth(j-c) 1.9 °C/W TO-220AB, per device 2
Coupling thermal resistance Rth(c) 0.8 °C/W TO-220AB 2

CAD (KiCad official)

  • Symbol: STTH1602CT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stth1602ct-etched.step / stth1602ct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stth1602ct.step / stth1602ct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 b1aeb264a8554d87, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF