main
Ray Set visibility: public a5b4b9d 7d ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "sts10p4llf6",
  "title": "STS10P4LLF6",
  "brief": "STMicroelectronics MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
    "sts10p4llf6",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "STS10P4LLF6",
    "manufacturer": "STMicroelectronics",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.st.com/resource/en/datasheet/sts10p4llf6.pdf",
    "parts": {
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      "footprint": "sts10p4llf6.kicad_mod",
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      "model_3d_plain": "sts10p4llf6-etched.glb",
      "model_3d_step": "sts10p4llf6-etched.step",
      "model_3d_step_plain": "sts10p4llf6.step",
      "lbr": "sts10p4llf6.lbr"
    },
    "distributor_links": {
      "lcsc": "C5268780",
      "digikey": "497-15483-2-ND",
      "mouser": "511-STS10P4LLF6"
    },
    "distributor_check": {
      "checked_at": "2026-10-30T16:44:29Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "497-15483-2-ND",
        "status": "found",
        "lifecycle": "Obsolete"
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        "pn": "511-STS10P4LLF6",
        "status": "found",
        "lifecycle": "End of Life"
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      {
        "number": "3",
        "name": "S",
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        "description": "Source of the P-channel MOSFET, pins 1, 2 and 3 are internally common; device is rated VDS -40 V and ID -10 A."
      },
      {
        "number": "4",
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      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
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      },
      {
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        "name": "D",
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      },
      {
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        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, pins 5, 6, 7 and 8 are internally common; drain-source voltage -40 V max and pulsed drain current -40 A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, pins 5, 6, 7 and 8 are internally common; drain-source voltage -40 V max and pulsed drain current -40 A."
      }
    ],
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin assignment taken from the page 1 schematic labels D(5,6,7,8), G(4), S(1,2,3); the datasheet text"
        ],
        "pages_sent": 13,
        "cost_usd": 0.0664,
        "at": "2026-10-30T16:44:22"
      },
      "datasheet": {
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        "pages": 13,
        "sha256": "32938de497ca98c8",
        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
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      "source": "datasheet package drawing, every number found on its page (extract_pins --task dims)",
      "model_check": {
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        "verdict": "PASS",
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  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "SO-8",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "8"
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    "characteristics": {
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      "rows": [
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          "name": "Drain-source voltage",
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          "max": -40,
          "conditions": "",
          "source_page": 2,
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          "conditions": "Tamb = 25 °C",
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          "max": -5.6,
          "conditions": "Tamb = 100 °C",
          "source_page": 2,
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          "conditions": "Pulse width limited by safe operating area",
          "source_page": 2,
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          "name": "Total power dissipation",
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          "unit": "W",
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          "name": "Storage temperature",
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          "unit": "°C",
          "min": -55,
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        {
          "name": "Operating junction temperature",
          "symbol": "TJ",
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          "min": null,
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          "conditions": "",
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        },
        {
          "name": "Thermal resistance, junction-to-ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 47,
          "conditions": "Mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
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          "unit": "V",
          "min": -40,
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          "max": null,
          "conditions": "ID = -250 µA",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Zero gate voltage drain current",
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          "name": "Zero gate voltage drain current",
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          "conditions": "VDS = -40 V, TC = 125 °C",
          "source_page": 3,
          "source": "datasheet"
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          "name": "Gate-body leakage current",
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          "conditions": "VDS = VGS, ID = -250 µA",
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          "name": "Static drain-source on-resistance",
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          "kind": "electrical",
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          "typ": 12.5,
          "max": 15,
          "conditions": "VGS = -10 V, ID = -3 A",
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          "source": "datasheet"
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          "name": "Static drain-source on-resistance",
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          "typ": 17,
          "max": 20,
          "conditions": "VGS = -4.5 V, ID = -3 A",
          "source_page": 3,
          "source": "datasheet"
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          "name": "Forward on voltage",
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          "max": -1.1,
          "conditions": "VGS = 0 V, ISD = -3 A",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Input capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 3525,
          "max": null,
          "conditions": "VDS = -25 V, f = 1 MHz, VGS = 0 V",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Output capacitance",
          "symbol": "Coss",
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          "conditions": "VDS = -25 V, f = 1 MHz, VGS = 0 V",
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        {
          "name": "Reverse transfer capacitance",
          "symbol": "Crss",
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          "min": null,
          "typ": 238.5,
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          "conditions": "VDS = -25 V, f = 1 MHz, VGS = 0 V",
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        {
          "name": "Total gate charge",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 34,
          "max": null,
          "conditions": "VDD = -20 V, ID = -10 A, VGS = -4.5 V",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Gate-source charge",
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          "kind": "electrical",
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          "typ": 11.3,
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          "name": "Gate-drain charge",
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        {
          "name": "Turn-on delay time",
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          "typ": 49.4,
          "max": null,
          "conditions": "VDD = -20 V, ID = -5 A, RG = 4.7 Ω, VGS = -10 V",
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          "name": "Rise time",
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          "min": null,
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          "conditions": "VDD = -20 V, ID = -5 A, RG = 4.7 Ω, VGS = -10 V",
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          "name": "Turn-off-delay time",
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          "name": "Fall time",
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          "conditions": "VDD = -20 V, ID = -5 A, RG = 4.7 Ω, VGS = -10 V",
          "source_page": 3,
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          "name": "Reverse recovery time",
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          "min": null,
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          "max": null,
          "conditions": "ISD = -5 A, di/dt = 100 A/µs, VDD = -32 V, TJ = 150 °C",
          "source_page": 3,
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        {
          "name": "Reverse recovery charge",
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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