component
STS10N3LH5-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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STS10N3LH5-VB
VBsemi Elec · MOSFETs · SO-8
STS10N3LH5-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, serving as the reference for VGS and the body diode, with VDS rated 30 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, serving as the reference for VGS and the body diode, with VDS rated 30 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, serving as the reference for VGS and the body diode, with VDS rated 30 V. |
| 4 | G | input | Gate terminal of the MOSFET; the gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 13 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 9 | A | TA = 25 °C (notes b, c) | 1 | ||
| Continuous Drain Current | ID | 7 | A | TA = 70 °C (notes b, c) | 1 | ||
| Pulsed Drain Current | IDM | 45 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.2 | W | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA = 70 °C (notes b, c) | 1 | ||
| Avalanche Energy | EAS | 21 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 39 | 55 | °C/W | t ≤ 10 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient | RthJA | 85 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 25 | 29 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.008 | Ω | VGS = 10 V, ID = 10 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.011 | Ω | VGS = 4.5 V, ID = 9 A | 2 | ||
| Gate Resistance | Rg | 0.36 | 1.8 | 3.6 | Ω | f = 1 MHz | 2 |
| Continuous Source-Drain Diode Current | IS | 10 | A | TC = 25 °C | 2 | ||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 9 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 15 | 30 | ns | IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 6 | 12 | nC | IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Rise Time | tr | 12 | 16 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 16 | 22 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 18 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 8 | 16 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 8 | 15 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Forward Transconductance | gfs | 50 | S | VDS = 15 V, ID = 10 A | 2 |
CAD (KiCad official)
- Symbol:
STS10N3LH5-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
sts10n3lh5-vb-etched.step/sts10n3lh5-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sts10n3lh5-vb.step/sts10n3lh5-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
95048395743dee6d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).