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Set visibility: public

Ray ·65dd4d3ae1 ·1mo ago ·parent e2097a8
1 file changed +10−7
page.json+10−7
@@ -32,31 +32,31 @@         "number": "1",         "name": "S1",         "type": "passive",-        "description": "Source of MOSFET 1. Return terminal for MOSFET 1 channel current (ID up to 10 A continuous at TC = 25 \u00b0C). Also anode of MOSFET 1 intrinsic body diode (VSD typ 1.1 V at ISD = 5 A)."+        "description": "Source of MOSFET 1. Return terminal for MOSFET 1 channel current (ID up to 10 A continuous at TC = 25 °C). Also anode of MOSFET 1 intrinsic body diode (VSD typ 1.1 V at ISD = 5 A)."       },       {         "number": "2",         "name": "G1",         "type": "input",-        "description": "Gate of MOSFET 1. Control input; VGS(th) typ 1 V (at ID = 250 \u00b5A), VGS absolute max \u00b122 V. Total gate charge Qg typ 4.6 nC at VGS = 5 V, VDD = 15 V, ID = 10 A."+        "description": "Gate of MOSFET 1. Control input; VGS(th) typ 1 V (at ID = 250 µA), VGS absolute max ±22 V. Total gate charge Qg typ 4.6 nC at VGS = 5 V, VDD = 15 V, ID = 10 A."       },       {         "number": "3",         "name": "S2",         "type": "passive",-        "description": "Source of MOSFET 2. Return terminal for MOSFET 2 channel current (ID up to 10 A continuous at TC = 25 \u00b0C). Also anode of MOSFET 2 intrinsic body diode."+        "description": "Source of MOSFET 2. Return terminal for MOSFET 2 channel current (ID up to 10 A continuous at TC = 25 °C). Also anode of MOSFET 2 intrinsic body diode."       },       {         "number": "4",         "name": "G2",         "type": "input",-        "description": "Gate of MOSFET 2. Control input; VGS(th) typ 1 V, VGS absolute max \u00b122 V. Independent from G1 (dual device with two separate control gates)."+        "description": "Gate of MOSFET 2. Control input; VGS(th) typ 1 V, VGS absolute max ±22 V. Independent from G1 (dual device with two separate control gates)."       },       {         "number": "5",         "name": "D2",         "type": "passive",-        "description": "Drain of MOSFET 2 (pin 5 of the D2 pair). Tied internally to pin 6 to double the drain bond-wire/lead current capacity. VDS max 30 V, ID up to 10 A continuous at TC = 25 \u00b0C."+        "description": "Drain of MOSFET 2 (pin 5 of the D2 pair). Tied internally to pin 6 to double the drain bond-wire/lead current capacity. VDS max 30 V, ID up to 10 A continuous at TC = 25 °C."       },       {         "number": "6",@@ -68,7 +68,7 @@         "number": "7",         "name": "D1",         "type": "passive",-        "description": "Drain of MOSFET 1 (pin 7 of the D1 pair). Internally common with pin 8. VDS max 30 V, ID up to 10 A continuous at TC = 25 \u00b0C."+        "description": "Drain of MOSFET 1 (pin 7 of the D1 pair). Internally common with pin 8. VDS max 30 V, ID up to 10 A continuous at TC = 25 °C."       },       {         "number": "8",@@ -144,5 +144,8 @@     "docs/sts10dn3lh5-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file