component
STQ2LN60K3-AP
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 20h ago |
| viewers | 20h ago |
| package.json | 20h ago |
| page.json | 20h ago |
| README.md | 20h ago |
| stq2ln60k3-ap-etched.glb | 20h ago |
| stq2ln60k3-ap-etched.step | 20h ago |
| stq2ln60k3-ap-hero.glb | 20h ago |
| stq2ln60k3-ap-hero.overlay.json | 20h ago |
| stq2ln60k3-ap.glb | 20h ago |
| stq2ln60k3-ap.kicad_mod | 20h ago |
| stq2ln60k3-ap.kicad_sym | 20h ago |
| stq2ln60k3-ap.lbr | 20h ago |
| stq2ln60k3-ap.step | 20h ago |
| verification.json | 20h ago |
STQ2LN60K3-AP
STMicroelectronics · MOSFETs · TO-92-3
STQ2LN60K3-AP from STMicroelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±30 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 600 V (VDS) per the absolute maximum ratings. |
| 3 | S | passive | Source terminal of the MOSFET; the gate-source back-to-back Zener diodes are built in for ESD protection. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-92-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | ID = 1 mA, VGS = 0 V | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 600 V | 4 | ||
| Zero gate voltage drain current at TC=125 °C | IDSS | 50 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (defined by design, not production tested) | 4 | ||
| Gate-body leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±20 V | 4 | |
| Gate threshold voltage | VGS(th) | 3 | 3.75 | 4.5 | V | VDS = VGS, ID = 50 µA | 4 |
| Static drain-source on-resistance | RDS(on) | 4 | 4.5 | Ω | VGS = 10 V, ID = 1 A | 4 | |
| Gate-source breakdown voltage | V(BR)GSO | 30 | V | IGS = ±1 mA, ID = 0 A | 5 | ||
| Source-drain current | ISD | 0.6 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 2.4 | A | 5 | |||
| Forward on voltage | VSD | 1.5 | V | ISD = 2 A, VGS = 0 V | 5 | ||
| Reverse recovery time | trr | 200 | ns | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery charge | Qrr | 800 | nC | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery current | IRRM | 8 | A | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery time | trr | 230 | ns | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Reverse recovery charge | Qrr | 950 | nC | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Reverse recovery current | IRRM | 8.5 | A | ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Drain-source voltage | VDS | 600 | V | 3 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 3 | ||
| Drain current (continuous) | ID | 0.6 | A | TC = 25 °C | 3 | ||
| Drain current (continuous) | ID | 0.38 | A | TC = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 2.4 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 2.5 | W | TC = 25 °C | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 12 | V/ns | ISD ≤ 2 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS | 3 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 3 | ||
| Single pulse avalanche current | IAS | 2 | A | Pulse width limited by Tjmax | 3 | ||
| Single pulse avalanche energy | EAS | 80 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 3 | ||
| Thermal resistance junction-case | Rthj-case | 50 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 120 | °C/W | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | Modified title, features and description on cover page Modified Table 2: "Absolute maximum ratings", Table 5: "On/off states" | 12 |
CAD (KiCad official)
- Symbol:
STQ2LN60K3-AP - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
stq2ln60k3-ap-etched.step/stq2ln60k3-ap-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stq2ln60k3-ap.step/stq2ln60k3-ap.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
8dc6fc93d69dd3b2, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).