main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 20h ago
viewers stq2ln60k3-ap: viewers · Ray 20h ago
package.json Publish 0.1.0 · Ray 20h ago
page.json Set visibility: public · Ray 20h ago
README.md Publish 0.1.0 · Ray 20h ago
stq2ln60k3-ap-etched.glb Publish 0.1.0 · Ray 20h ago
stq2ln60k3-ap-etched.step stq2ln60k3-ap: factory component page (tier=mfr) · Ray 20h ago
stq2ln60k3-ap-hero.glb stq2ln60k3-ap: hero GLB from the etched model (keeps the MPN mark) · Ray 20h ago
stq2ln60k3-ap-hero.overlay.json Publish 0.1.0 · Ray 20h ago
stq2ln60k3-ap.glb Publish 0.1.0 · Ray 20h ago
stq2ln60k3-ap.kicad_mod Publish 0.1.0 · Ray 20h ago
stq2ln60k3-ap.kicad_sym Publish 0.1.0 · Ray 20h ago
stq2ln60k3-ap.lbr Publish 0.1.0 · Ray 20h ago
stq2ln60k3-ap.step Publish 0.1.0 · Ray 20h ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 20h ago

STQ2LN60K3-AP

STMicroelectronics · MOSFETs · TO-92-3

STQ2LN60K3-AP from STMicroelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET; gate-source voltage is rated ±30 V (VGS) per the absolute maximum ratings.
2 D passive Drain terminal of the MOSFET; drain-source voltage is rated 600 V (VDS) per the absolute maximum ratings.
3 S passive Source terminal of the MOSFET; the gate-source back-to-back Zener diodes are built in for ESD protection.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 600 V ID = 1 mA, VGS = 0 V 4
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 600 V 4
Zero gate voltage drain current at TC=125 °C IDSS 50 µA VGS = 0 V, VDS = 600 V, TC = 125 °C (defined by design, not production tested) 4
Gate-body leakage current IGSS -10 10 µA VDS = 0 V, VGS = ±20 V 4
Gate threshold voltage VGS(th) 3 3.75 4.5 V VDS = VGS, ID = 50 µA 4
Static drain-source on-resistance RDS(on) 4 4.5 Ω VGS = 10 V, ID = 1 A 4
Gate-source breakdown voltage V(BR)GSO 30 V IGS = ±1 mA, ID = 0 A 5
Source-drain current ISD 0.6 A 5
Source-drain current (pulsed) ISDM 2.4 A 5
Forward on voltage VSD 1.5 V ISD = 2 A, VGS = 0 V 5
Reverse recovery time trr 200 ns ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V 5
Reverse recovery charge Qrr 800 nC ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V 5
Reverse recovery current IRRM 8 A ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V 5
Reverse recovery time trr 230 ns ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C 5
Reverse recovery charge Qrr 950 nC ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C 5
Reverse recovery current IRRM 8.5 A ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C 5
Drain-source voltage VDS 600 V 3
Gate-source voltage VGS -30 30 V 3
Drain current (continuous) ID 0.6 A TC = 25 °C 3
Drain current (continuous) ID 0.38 A TC = 100 °C 3
Drain current (pulsed) IDM 2.4 A Pulse width limited by safe operating area 3
Total dissipation PTOT 2.5 W TC = 25 °C 3
Peak diode recovery voltage slope dv/dt 12 V/ns ISD ≤ 2 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS 3
Storage temperature range Tstg -55 150 °C 3
Single pulse avalanche current IAS 2 A Pulse width limited by Tjmax 3
Single pulse avalanche energy EAS 80 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 3
Thermal resistance junction-case Rthj-case 50 °C/W 3
Thermal resistance junction-ambient Rthj-amb 120 °C/W 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs Modified title, features and description on cover page Modified Table 2: "Absolute maximum ratings", Table 5: "On/off states" 12

CAD (KiCad official)

  • Symbol: STQ2LN60K3-AP
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: stq2ln60k3-ap-etched.step / stq2ln60k3-ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stq2ln60k3-ap.step / stq2ln60k3-ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 8dc6fc93d69dd3b2, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF