component
STPS61L45CT
Public Made by Adomby adom
STMicroelectronics Schottky Diodes, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STPS61L45CT
STMicroelectronics · Schottky Diodes · TO-220AB-3
STPS61L45CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode 1 of the dual center-tap Schottky rectifier, rated 30 A average forward current per diode and VRRM 45 V. |
| 2 | K | passive | Common cathode of both diodes, also connected to the metal tab, with VRRM 45 V and 60 A total average forward current per device. |
| 3 | A2 | passive | Anode of diode 2 of the dual center-tap Schottky rectifier, rated 30 A average forward current per diode and VRRM 45 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 45 | V | 2 | |||
| Forward rms current | IF(RMS) | 60 | A | 2 | |||
| Average forward current | IF(AV) | 30 | A | Per diode; δ = 0.5; Tc = 120 °C | 2 | ||
| Average forward current | IF(AV) | 60 | A | Per device; Tc = 115 °C | 2 | ||
| Surge non repetitive forward current | IFSM | 500 | A | tp = 10 ms sinusoidal | 2 | ||
| Repetitive peak avalanche power | PARM | 10000 | W | tp = 1 µs; Tj = 25 °C | 2 | ||
| Storage temperature range | Tstg | -65 | 175 | °C | 2 | ||
| Maximum operating junction temperature | Tj | 150 | °C | Condition to avoid runaway for a diode on its own heatsink | 2 | ||
| Junction to case thermal resistance | Rth(j-c) | 1.3 | °C/W | Per diode | 2 | ||
| Junction to case thermal resistance | Rth(j-c) | 0.75 | °C/W | Total (both diodes) | 2 | ||
| Coupling thermal resistance | Rth(c) | 0.2 | °C/W | 2 | |||
| Reverse leakage current | IR | 1.5 | mA | Per diode; Tj = 25 °C; VR = VRRM; pulse tp = 5 ms, δ < 2% | 2 | ||
| Reverse leakage current | IR | 190 | 400 | mA | Per diode; Tj = 125 °C; VR = VRRM; pulse tp = 5 ms, δ < 2% | 2 | |
| Forward voltage drop | VF | 0.35 | V | Per diode; Tj = 25 °C; IF = 5 A; pulse tp = 380 µs, δ < 2% | 2 | ||
| Forward voltage drop | VF | 0.23 | V | Per diode; Tj = 125 °C; IF = 5 A; pulse tp = 380 µs, δ < 2% | 2 | ||
| Forward voltage drop | VF | 0.43 | 0.5 | V | Per diode; Tj = 25 °C; IF = 15 A; pulse tp = 380 µs, δ < 2% | 2 | |
| Forward voltage drop | VF | 0.34 | 0.4 | V | Per diode; Tj = 125 °C; IF = 15 A; pulse tp = 380 µs, δ < 2% | 2 | |
| Forward voltage drop | VF | 0.5 | 0.56 | V | Per diode; Tj = 25 °C; IF = 30 A; pulse tp = 380 µs, δ < 2% | 2 | |
| Forward voltage drop | VF | 0.45 | 0.51 | V | Per diode; Tj = 125 °C; IF = 30 A; pulse tp = 380 µs, δ < 2% | 2 |
CAD (KiCad official)
- Symbol:
STPS61L45CT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
stps61l45ct-etched.step/stps61l45ct-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stps61l45ct.step/stps61l45ct.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (8 pp, sha256
12bca3315b843d82, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STPS61L45CT
**STMicroelectronics** · Schottky Diodes · TO-220AB-3
STPS61L45CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode 1 of the dual center-tap Schottky rectifier, rated 30 A average forward current per diode and VRRM 45 V. |
| 2 | K | passive | Common cathode of both diodes, also connected to the metal tab, with VRRM 45 V and 60 A total average forward current per device. |
| 3 | A2 | passive | Anode of diode 2 of the dual center-tap Schottky rectifier, rated 30 A average forward current per diode and VRRM 45 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | | | 45 | V | | 2 |
| Forward rms current | IF(RMS) | | | 60 | A | | 2 |
| Average forward current | IF(AV) | | | 30 | A | Per diode; δ = 0.5; Tc = 120 °C | 2 |
| Average forward current | IF(AV) | | | 60 | A | Per device; Tc = 115 °C | 2 |
| Surge non repetitive forward current | IFSM | | | 500 | A | tp = 10 ms sinusoidal | 2 |
| Repetitive peak avalanche power | PARM | | | 10000 | W | tp = 1 µs; Tj = 25 °C | 2 |
| Storage temperature range | Tstg | -65 | | 175 | °C | | 2 |
| Maximum operating junction temperature | Tj | | | 150 | °C | Condition to avoid runaway for a diode on its own heatsink | 2 |
| Junction to case thermal resistance | Rth(j-c) | | | 1.3 | °C/W | Per diode | 2 |
| Junction to case thermal resistance | Rth(j-c) | | | 0.75 | °C/W | Total (both diodes) | 2 |
| Coupling thermal resistance | Rth(c) | | | 0.2 | °C/W | | 2 |
| Reverse leakage current | IR | | | 1.5 | mA | Per diode; Tj = 25 °C; VR = VRRM; pulse tp = 5 ms, δ < 2% | 2 |
| Reverse leakage current | IR | | 190 | 400 | mA | Per diode; Tj = 125 °C; VR = VRRM; pulse tp = 5 ms, δ < 2% | 2 |
| Forward voltage drop | VF | | | 0.35 | V | Per diode; Tj = 25 °C; IF = 5 A; pulse tp = 380 µs, δ < 2% | 2 |
| Forward voltage drop | VF | | 0.23 | | V | Per diode; Tj = 125 °C; IF = 5 A; pulse tp = 380 µs, δ < 2% | 2 |
| Forward voltage drop | VF | | 0.43 | 0.5 | V | Per diode; Tj = 25 °C; IF = 15 A; pulse tp = 380 µs, δ < 2% | 2 |
| Forward voltage drop | VF | | 0.34 | 0.4 | V | Per diode; Tj = 125 °C; IF = 15 A; pulse tp = 380 µs, δ < 2% | 2 |
| Forward voltage drop | VF | | 0.5 | 0.56 | V | Per diode; Tj = 25 °C; IF = 30 A; pulse tp = 380 µs, δ < 2% | 2 |
| Forward voltage drop | VF | | 0.45 | 0.51 | V | Per diode; Tj = 125 °C; IF = 30 A; pulse tp = 380 µs, δ < 2% | 2 |
## CAD (KiCad official)
- Symbol: `STPS61L45CT`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files: `stps61l45ct-etched.step` / `stps61l45ct-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stps61l45ct.step` / `stps61l45ct.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603087472192733184) (8 pp, sha256 `12bca3315b843d82`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stps61l45ct-datasheet.pdf)