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STPS60SM200CW
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STMicroelectronics Schottky Barrier Diodes (SBD), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STPS60SM200CW
STMicroelectronics · Schottky Barrier Diodes (SBD) · TO-247-3
STPS60SM200CW from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode 1 of the dual Schottky rectifier, rated 30 A average forward current per diode and 200 V VRRM. |
| 2 | K | passive | Common cathode of both diodes (also connected to the mounting tab), rated 200 V repetitive peak reverse voltage. |
| 3 | A2 | passive | Anode of diode 2 of the dual Schottky rectifier, rated 30 A average forward current per diode and 200 V VRRM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 200 | V | per diode | 2 | ||
| Forward current rms | IF(RMS) | 50 | A | per diode | 2 | ||
| Average forward current per diode | IF(AV) | 30 | A | Per diode, δ = 0.5, Tc = 155 °C | 2 | ||
| Average forward current per device | IF(AV) | 60 | A | per device, δ = 0.5, Tc = 150 °C | 2 | ||
| Surge non repetitive forward current | IFSM | 500 | A | tp = 10 ms sinusoidal, Tc = 25 °C | 2 | ||
| Storage temperature range | Tstg | -65 | 175 | °C | 2 | ||
| Maximum operating junction temperature | Tj | -40 | 175 | °C | 2 | ||
| Junction to case thermal resistance per diode | Rth(j-c) | 0.7 | °C/W | Per diode | 2 | ||
| Junction to case thermal resistance total | Rth(j-c) | 0.5 | °C/W | Total | 2 | ||
| Coupling thermal resistance | Rth(c) | 0.3 | °C/W | Coupling | 2 | ||
| Reverse leakage current | IR | 0.05 | mA | Tj = 25 °C, VR = VRRM | 2 | ||
| Reverse leakage current | IR | 6 | 13 | mA | Tj = 125 °C, VR = VRRM | 2 | |
| Forward voltage drop | VF | 0.67 | 0.7 | V | Tj = 25 °C, IF = 7.5 A | 2 | |
| Forward voltage drop | VF | 0.51 | 0.55 | V | Tj = 125 °C, IF = 7.5 A | 2 | |
| Forward voltage drop | VF | 0.73 | 0.77 | V | Tj = 25 °C, IF = 15 A | 2 | |
| Forward voltage drop | VF | 0.57 | 0.61 | V | Tj = 125 °C, IF = 15 A | 2 | |
| Forward voltage drop | VF | 0.79 | 0.83 | V | Tj = 25 °C, IF = 30 A | 2 | |
| Forward voltage drop | VF | 0.64 | 0.69 | V | Tj = 125 °C, IF = 30 A | 2 |
CAD (KiCad official)
- Symbol:
STPS60SM200CW - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
stps60sm200cw-etched.step/stps60sm200cw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stps60sm200cw.step/stps60sm200cw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (7 pp, sha256
745998550543f71f, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STPS60SM200CW
**STMicroelectronics** · Schottky Barrier Diodes (SBD) · TO-247-3
STPS60SM200CW from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode 1 of the dual Schottky rectifier, rated 30 A average forward current per diode and 200 V VRRM. |
| 2 | K | passive | Common cathode of both diodes (also connected to the mounting tab), rated 200 V repetitive peak reverse voltage. |
| 3 | A2 | passive | Anode of diode 2 of the dual Schottky rectifier, rated 30 A average forward current per diode and 200 V VRRM. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | | | 200 | V | per diode | 2 |
| Forward current rms | IF(RMS) | | | 50 | A | per diode | 2 |
| Average forward current per diode | IF(AV) | | | 30 | A | Per diode, δ = 0.5, Tc = 155 °C | 2 |
| Average forward current per device | IF(AV) | | | 60 | A | per device, δ = 0.5, Tc = 150 °C | 2 |
| Surge non repetitive forward current | IFSM | | | 500 | A | tp = 10 ms sinusoidal, Tc = 25 °C | 2 |
| Storage temperature range | Tstg | -65 | | 175 | °C | | 2 |
| Maximum operating junction temperature | Tj | -40 | | 175 | °C | | 2 |
| Junction to case thermal resistance per diode | Rth(j-c) | | | 0.7 | °C/W | Per diode | 2 |
| Junction to case thermal resistance total | Rth(j-c) | | | 0.5 | °C/W | Total | 2 |
| Coupling thermal resistance | Rth(c) | | | 0.3 | °C/W | Coupling | 2 |
| Reverse leakage current | IR | | | 0.05 | mA | Tj = 25 °C, VR = VRRM | 2 |
| Reverse leakage current | IR | | 6 | 13 | mA | Tj = 125 °C, VR = VRRM | 2 |
| Forward voltage drop | VF | | 0.67 | 0.7 | V | Tj = 25 °C, IF = 7.5 A | 2 |
| Forward voltage drop | VF | | 0.51 | 0.55 | V | Tj = 125 °C, IF = 7.5 A | 2 |
| Forward voltage drop | VF | | 0.73 | 0.77 | V | Tj = 25 °C, IF = 15 A | 2 |
| Forward voltage drop | VF | | 0.57 | 0.61 | V | Tj = 125 °C, IF = 15 A | 2 |
| Forward voltage drop | VF | | 0.79 | 0.83 | V | Tj = 25 °C, IF = 30 A | 2 |
| Forward voltage drop | VF | | 0.64 | 0.69 | V | Tj = 125 °C, IF = 30 A | 2 |
## CAD (KiCad official)
- Symbol: `STPS60SM200CW`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `stps60sm200cw-etched.step` / `stps60sm200cw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stps60sm200cw.step` / `stps60sm200cw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stps60sm200cw.pdf) (7 pp, sha256 `745998550543f71f`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stps60sm200cw-datasheet.pdf)