component

STPS30H60CT

Public Made by Adom

by adom

STMicroelectronics Schottky Barrier Diodes (SBD), TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentdiodesstps30h60ctfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

STPS30H60CT

STMicroelectronics · Schottky Barrier Diodes (SBD) · TO-220

STPS30H60CT from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first Schottky diode (15 A average forward current per diode, VRRM 60 V).
2 K passive Common cathode of both diodes (centre tab), shared by A1 and A2; the package is a dual centre-tab rectifier.
3 A2 passive Anode of the second Schottky diode (15 A average forward current per diode, VRRM 60 V).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse leakage current IR 60 µA Tj = 25 °C, VR = VRRM 2
Reverse leakage current IR 8 25 mA Tj = 125 °C, VR = VRRM 2
Forward voltage drop VF 550 mV Tj = 25 °C, IF = 7.5 A 2
Forward voltage drop VF 435 470 mV Tj = 125 °C, IF = 7.5 A 2
Forward voltage drop VF 660 mV Tj = 25 °C, IF = 15 A 2
Forward voltage drop VF 535 570 mV Tj = 125 °C, IF = 15 A 2
Forward voltage drop VF 820 mV Tj = 25 °C, IF = 30 A 2
Forward voltage drop VF 635 690 mV Tj = 125 °C, IF = 30 A 2
Repetitive peak reverse voltage VRRM 60 V 2
Forward rms current IF(RMS) 30 A 2
Average forward current per diode IF(AV) 15 A TO-220AB, Tc = 155 °C, δ = 0.5, per diode 2
Average forward current total package IF(AV) 30 A TO-220AB, Tc = 155 °C, δ = 0.5, total package 2
Surge non repetitive forward current IFSM 230 A tp = 10 ms sinusoidal 2
Relative peak avalanche power PARM 10200 W Tj = 25 °C, tp = 1 µs 2
Storage temperature range Tstg -65 175 °C 2
Maximum operating junction temperature Tj 175 °C condition to avoid thermal runaway for a diode on its own heatsink 2
Junction to case thermal resistance per diode Rth(j-c) 1.5 °C/W TO-220AB, per diode 2
Junction to case thermal resistance total Rth(j-c) 0.8 °C/W TO-220AB, total 2
Coupling thermal resistance Rth(c) 0.1 °C/W TO-220AB 2

CAD (KiCad official)

  • Symbol: STPS30H60CT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stps30h60ct-etched.step / stps30h60ct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stps30h60ct.step / stps30h60ct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (11 pp, sha256 b21b013a4fa13898, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF