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STPS20150CT

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STMicroelectronics Schottky Barrier Diodes (SBD), TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STPS20150CT

STMicroelectronics · Schottky Barrier Diodes (SBD) · TO-220AB-3

STPS20150CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1 (first Schottky diode of the dual center-tap rectifier), rated VRRM 150 V and IF(AV) 10 A per diode.
2 K passive Common cathode of both diodes, also connected to the metal tab, rated VRRM 150 V and IF(AV) 2 x 10 A.
3 A2 passive Anode of diode 2 (second Schottky diode of the dual center-tap rectifier), rated VRRM 150 V and IF(AV) 10 A per diode.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 150 V 2
Forward rms current IF(RMS) 30 A 2
Average forward current (per diode) IF(AV) 10 A δ = 0.5, square wave; TO-220AB, TC = 155 °C; per diode 2
Average forward current (per device) IF(AV) 20 A δ = 0.5, square wave; all types; per device 2
Surge non repetitive forward current IFSM 180 A tp = 10 ms sinusoidal 2
Repetitive peak avalanche power PARM 480 W tp = 10 µs, Tj = 125 °C 2
Storage temperature range Tstg -65 175 °C 2
Maximum operating junction temperature Tj 175 °C Note 1: (dPtot/dTj) < (1/Rth(j-a)) to avoid thermal runaway for a diode on its own heatsink 2
Reverse leakage current IR 5 µA Tj = 25 °C, VR = VRRM; pulse test tp = 5 ms, δ < 2% 2
Reverse leakage current IR 5 mA Tj = 125 °C, VR = VRRM; pulse test tp = 5 ms, δ < 2% 2
Forward voltage drop VF 0.92 V Tj = 25 °C, IF = 10 A; pulse test tp = 380 µs, δ < 2% 2
Forward voltage drop VF 0.69 0.75 V Tj = 125 °C, IF = 10 A; pulse test tp = 380 µs, δ < 2% 2
Forward voltage drop VF 1 V Tj = 25 °C, IF = 20 A; pulse test tp = 380 µs, δ < 2% 2
Forward voltage drop VF 0.79 0.86 V Tj = 125 °C, IF = 20 A; pulse test tp = 380 µs, δ < 2% 2
Junction to case thermal resistance (per diode) Rth(j-c) 2.2 °C/W TO-220AB, D2PAK, I2PAK; per diode 2
Junction to case thermal resistance (total) Rth(j-c) 1.3 °C/W TO-220AB, D2PAK, I2PAK; total 2
Coupling thermal resistance Rth(c) 0.3 °C/W TO-220AB, D2PAK, I2PAK 2
Thermal resistance junction to ambient Rth(j-a) 15 °C/W Figure 2 curve annotation 3

CAD (KiCad official)

  • Symbol: STPS20150CT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: stps20150ct-etched.step / stps20150ct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stps20150ct.step / stps20150ct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 b4022acbdaa46a22, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF