component
STPS10H100CT
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STMicroelectronics Schottky Diodes, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STPS10H100CT
STMicroelectronics · Schottky Diodes · TO-220AB-3
STPS10H100CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode 1; each diode is rated 5 A average forward current (IF(AV)) with VRRM of 100 V. |
| 2 | K | passive | Common cathode of both Schottky diodes, also connected to the metal tab; 2 x 5 A total 10 A per device at TC = 165 °C. |
| 3 | A2 | passive | Anode of diode 2; each diode is rated 5 A average forward current (IF(AV)) with VRRM of 100 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 100 | V | 2 | |||
| Forward rms current | IF(RMS) | 10 | A | 2 | |||
| Average forward current, per diode (TO-220AB/D2PAK) | IF(AV) | 5 | A | δ = 0.5, square wave; TC = 165 °C | 2 | ||
| Average forward current, per device (TO-220AB/D2PAK) | IF(AV) | 10 | A | δ = 0.5, square wave; TC = 165 °C | 2 | ||
| Surge non repetitive forward current | IFSM | 180 | A | tp = 10 ms sinusoidal | 2 | ||
| Repetitive peak avalanche power | PARM | 515 | W | tp = 10 µs, Tj = 125 °C | 2 | ||
| Storage temperature range | Tstg | -65 | 175 | °C | 2 | ||
| Maximum operating junction temperature | Tj | 175 | °C | Note (1): (dPtot/dTj) < (1/Rth(j-a)) to avoid thermal runaway on own heatsink | 2 | ||
| Junction to case, per diode (TO-220AB/D2PAK) | Rth(j-c) | 2.2 | °C/W | 2 | |||
| Junction to case, total (TO-220AB/D2PAK) | Rth(j-c) | 1.3 | °C/W | 2 | |||
| Coupling thermal resistance (TO-220AB/D2PAK) | Rth(c) | 0.3 | °C/W | 2 | |||
| Reverse leakage current | IR | 3.5 | µA | Tj = 25 °C; VR = VRRM; pulse test tp = 5 ms, δ < 2% | 3 | ||
| Reverse leakage current | IR | 1.3 | 4.5 | mA | Tj = 125 °C; VR = VRRM; pulse test tp = 5 ms, δ < 2% | 3 | |
| Forward voltage drop | VF | 0.73 | V | Tj = 25 °C; IF = 5 A; pulse test tp = 380 µs, δ < 2% | 3 | ||
| Forward voltage drop | VF | 0.57 | 0.61 | V | Tj = 125 °C; IF = 5 A; pulse test tp = 380 µs, δ < 2% | 3 | |
| Forward voltage drop | VF | 0.85 | V | Tj = 25 °C; IF = 10 A; pulse test tp = 380 µs, δ < 2% | 3 | ||
| Forward voltage drop | VF | 0.66 | 0.71 | V | Tj = 125 °C; IF = 10 A; pulse test tp = 380 µs, δ < 2% | 3 |
CAD (KiCad official)
- Symbol:
STPS10H100CT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
stps10h100ct-etched.step/stps10h100ct-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stps10h100ct.step/stps10h100ct.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (15 pp, sha256
0dc59025b8129347, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STPS10H100CT
**STMicroelectronics** · Schottky Diodes · TO-220AB-3
STPS10H100CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode 1; each diode is rated 5 A average forward current (IF(AV)) with VRRM of 100 V. |
| 2 | K | passive | Common cathode of both Schottky diodes, also connected to the metal tab; 2 x 5 A total 10 A per device at TC = 165 °C. |
| 3 | A2 | passive | Anode of diode 2; each diode is rated 5 A average forward current (IF(AV)) with VRRM of 100 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | | | 100 | V | | 2 |
| Forward rms current | IF(RMS) | | | 10 | A | | 2 |
| Average forward current, per diode (TO-220AB/D2PAK) | IF(AV) | | | 5 | A | δ = 0.5, square wave; TC = 165 °C | 2 |
| Average forward current, per device (TO-220AB/D2PAK) | IF(AV) | | | 10 | A | δ = 0.5, square wave; TC = 165 °C | 2 |
| Surge non repetitive forward current | IFSM | | | 180 | A | tp = 10 ms sinusoidal | 2 |
| Repetitive peak avalanche power | PARM | | | 515 | W | tp = 10 µs, Tj = 125 °C | 2 |
| Storage temperature range | Tstg | -65 | | 175 | °C | | 2 |
| Maximum operating junction temperature | Tj | | | 175 | °C | Note (1): (dPtot/dTj) < (1/Rth(j-a)) to avoid thermal runaway on own heatsink | 2 |
| Junction to case, per diode (TO-220AB/D2PAK) | Rth(j-c) | | | 2.2 | °C/W | | 2 |
| Junction to case, total (TO-220AB/D2PAK) | Rth(j-c) | | | 1.3 | °C/W | | 2 |
| Coupling thermal resistance (TO-220AB/D2PAK) | Rth(c) | | | 0.3 | °C/W | | 2 |
| Reverse leakage current | IR | | | 3.5 | µA | Tj = 25 °C; VR = VRRM; pulse test tp = 5 ms, δ < 2% | 3 |
| Reverse leakage current | IR | | 1.3 | 4.5 | mA | Tj = 125 °C; VR = VRRM; pulse test tp = 5 ms, δ < 2% | 3 |
| Forward voltage drop | VF | | | 0.73 | V | Tj = 25 °C; IF = 5 A; pulse test tp = 380 µs, δ < 2% | 3 |
| Forward voltage drop | VF | | 0.57 | 0.61 | V | Tj = 125 °C; IF = 5 A; pulse test tp = 380 µs, δ < 2% | 3 |
| Forward voltage drop | VF | | | 0.85 | V | Tj = 25 °C; IF = 10 A; pulse test tp = 380 µs, δ < 2% | 3 |
| Forward voltage drop | VF | | 0.66 | 0.71 | V | Tj = 125 °C; IF = 10 A; pulse test tp = 380 µs, δ < 2% | 3 |
## CAD (KiCad official)
- Symbol: `STPS10H100CT`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files: `stps10h100ct-etched.step` / `stps10h100ct-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stps10h100ct.step` / `stps10h100ct.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896915618738177) (15 pp, sha256 `0dc59025b8129347`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stps10h100ct-datasheet.pdf)